Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode

Abstract

We demonstrate an AlGaN-channel Schottky barrier diode (SBD) with a molybdenum anode that has excellent performance at high temperatures. The AlGaN-channel SBD shows a suppressed leakage current, compared to a GaN-channel SBD, and the leakage current only increases by 3.5 times when the temperature increases from 300 K to 425 K, while that of the GaN-channel SBD increases by 27.8 times. Meanwhile, the forward current also shows less degeneration at an elevated temperature. Combined with the 1 A forward current of a large-periphery device with a perimeter of 20 mm, the AlGaN-channel SBD shows great potential for use in next-generation power electronics, especially in extreme environments.

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

“…As a result of the investigation carried out, an optimal set of diode construction features was identified, as well as general dependences between design features and electrical parameters. The obtained dependences partially agree with the results presented in other works, in which the diodes were manufactured on CMOS fabs [15,16] and RF fabs [18][19][20][21][22][23][24][25][26][27][28]. Particularly, a decrease in reverse currents and an increase in forward currents with an increase in the depth of the subanode recess on structures with Ni SC was observed, as was the case in [22].…”

“…Many results of design and production of GaN Schottky barrier diodes (SBDs) have been presented [15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Some research has been focused on CMOS fabs [15][16][17] and other research has focused on RF fabs [18][19][20][21][22][23][24][25][26][27][28].…”

“…Many results of design and production of GaN Schottky barrier diodes (SBDs) have been presented [15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Some research has been focused on CMOS fabs [15][16][17] and other research has focused on RF fabs [18][19][20][21][22][23][24][25][26][27][28]. To date, quite a lot of design features have been reported regarding SBDs, and most of reported results have used field plates for efficient electric field redistribution between anode and cathode, and increasing the diode's breakdown voltage (V BR ) [16]; increasing anode-to-cathode distance leads to an increase in the diode's resistance in the ON-state (R ON ) and V BR [29].…”

Recent progress of integrated circuits and optoelectronic chips

“…Al x Ga 1−x N as ultra-wide bandgap semiconductor is more suitable for high temperature and high voltage applications due to its larger Eg (3.4 to 6.2 eV) [115][116][117][118]. Thanks to the improvements of the material growth quality, Al x Ga 1−x N-based electronic devices have also made a lot of progresses in recent years.…”

“…The 5% Al composition AlGaN channel SBD shows better temperature degradation immunity when compared with GaN channel SBD in both on and off states. The leakage current of the AlGaN channel SBD only increased by 3.5 times from 300 to 425 K, while that of GaN channel SBD increased by 27.8 times [115]. As for high-Al application [116], it is suggested to use 85% AlGaN as an alternative channel material by considering the shallower activation energy of donor in GaN [117], without compromising the breakdown characteristics of AlN.…”