Investigation of Annealing and Degradation Effects on a-Si PV Modules in Real Operating Conditions

Chianese, D.; Friesen, Thomas; Burà, E.; Pola, I.; Fanni, L.

doi:10.4229/24theupvsec2009-4av.3.92

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…It should be noted that degradation is also dependent on the type of the load and degradation analyses at module level are often conducted with no load for practical reasons. 9,[17][18][19] The dependence of the degradation of a-Si modules on the type of load was investigated by Fanni et al, 25 which observed higher degradation rates for modules under open-circuit conditions. 25 The study carried on over these thin-film modules has been divided into three different parts: (1) the initial strong power drop during the first days of exposure is analyzed; (2) the degradation during the first 12 months is studied; (3) finally, a comparison of the module performance before and after the subsequent 10 years of exposure is performed.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Piliougine

Sánchez-Friera

Petrone

et al. 2022

Progress in Photovoltaics

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The degradation of two amorphous silicon‐based photovoltaic (PV) modules, namely, of single junction amorphous silicon (a‐Si) and of micromorph tandem (a‐Si/ μ‐Si), after 11 years of exposure in the south of Spain is analyzed. Their I‐V curves were measured outdoors to study the changes of the electrical parameters in the course of three different periods: during the initial days of exposure, during the first year, and in the subsequent 10‐year period. The translation of the curves to an identical set of operating conditions, which enables a meaningful comparison, was done by the different correction procedures described in the standard IEC60891:2021, including the procedure 3, which does not require the knowledge of module parameters, whose values are typically not available. The annual power degradation rates over the entire 11‐year period are 1.12% for the a‐Si module, which is 3.02% for the first year, and 0.98% for the a‐Si/ normalμ‐Si, which is 2.29% for the initial year.

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Section: Introductionmentioning

confidence: 99%

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Piliougine

Sánchez-Friera

Petrone

et al. 2022

Progress in Photovoltaics

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An Analytical Exploration of the Degradation Rates in Photovoltaic Systems

Fatima,

Minai,

Malik

et al. 2024

Advances in Intelligent Systems and Computing

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Mechanical Characterization of Single-Crystal Silicon PV Cells

Gerosa

Mauri

Rivolta

et al. 2013

Materials Performance and Characterization

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This paper describes standard and innovative methods for characterizing the mechanical properties of single-crystal silicon cells [orientation (100)] for photovoltaic applications. The knowledge of their mechanical properties is not completely known in the technical literature and this knowledge could enhance the results of modern simulation softwares. The silicon cells were investigated before and after an aging at 100°C for 100 h. In the technical literature, an annealing at temperatures ranging from 70°C up to 180°C is proposed as a possible way to reverse the degradation of such components caused by long-time exposure to daylight (light-induced degradation, LID), and to obtain a recovery of the efficiency. Nevertheless, little information about the influence of such an annealing on the panel mechanical performances is available. Universal instrumented hardness tests were carried out to estimate the Young’s modulus; the fracture toughness was calculated by measuring the lengths of the cracks originated from the imprint corners. Moreover, the threshold load under which no cracks appear was estimated. Finally, bending tests were performed to evaluate the mechanical resistance. Such tests were carried out on a tensile testing machine after the design and the realization of suitable devices assembled on the machine standard fixtures.

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Investigation of Annealing and Degradation Effects on a-Si PV Modules in Real Operating Conditions

Cited by 3 publications

References 2 publications

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

An Analytical Exploration of the Degradation Rates in Photovoltaic Systems

Mechanical Characterization of Single-Crystal Silicon PV Cells

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