Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells

Parola, S.; Vauthelin, A.; Mart́ınez, F.; Tournet, Julie; Husseini, J. El; Kret, Joanna; Qbesnel, Etienne; Rouillard, Y.; Tournié, E.; Cuminal, Y.

doi:10.1109/pvsc.2018.8547496

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Supported by these observations, we have decided to investigate the growth and processing of GaSb single junction cells on Si. GaSbbased solar cells were recently studied to serve as subcells of multi-junction solar cells [25], [26], [27]. The wide range of alloys lattice-matched to GaSb, combined with the natural broken-gap alignment of the InAs/GaSb tunnel junction [28] could actually allow the fabrication of the entire structure of an all lattice-matched multi-junction cell.…”

Section: Monolithic Integration Of Iii-sb On Simentioning

confidence: 99%

GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

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Section: Monolithic Integration Of Iii-sb On Simentioning

confidence: 99%

GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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“…Gallium antimonide (GaSb) is a III-V group semiconductor with a direct band gap of 0.73 eV and a high hole mobility [1]. GaSb is a promising material in the field of shortwave infrared absorption, with applications of, for example, infrared detectors [2], broadband solar cells [3][4][5] and photoactive layers for thermophotovoltaic cells [6,7]. The largescale integration of GaSb with silicon would be highly promising for GaSb/silicon-based optical and electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation

Goroshko¹,

Chusovitin²,

Subbotin³

et al. 2020

Semicond. Sci. Technol.

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The temperature stability of high-density GaSb quantum dots grown on a Si(111) surface using solid-phase epitaxy is investigated during annealing at 450 °C. It is found that the bare silicon surface plays a critical role in the GaSb decomposition through the destruction of Sb–Ga bonds with the simultaneous formation of Sb–Si bonds. GaSb decomposition can be significantly suppressed if saturated monolayer coverage in the form of the Si(111)-(√3 × √3)-R30°-Sb surface reconstruction is preliminarily formed. This allows GaSb quantum dots to be embedded in the silicon matrix using molecular beam epitaxy at high temperature.

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