Abstract:Band alignments between atomic layer deposition (ALD) HfO2/Al2O3 double layers and InAlAs were investigated by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The relationship of As and Hf 4f peaks reducing with the decreasing take-off angle θ indicated upward band bending on the InAlAs surface and a potential gradient in the HfO2/Al2O3 layer. AR-XPS measurements were combined with numerical calculations. The valence band and conduction band discontinuity between HfO2/Al2O3 and InAlAs were 2.49 ± 0.2… Show more
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