Investigation of Basis set Effects on the NMR Chemical Shielding tensors data on (10, 10) SWCNTs Calixarene complexes

Bashiz, Roghieh Tarlani; Shabanzadeh, Elham

doi:10.13005/ojc/310465

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2016

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“…In 1975, phenomena of a tunneling magnetoresistance effect for first time reported. Also, scientists developed the production of magnetic tunnel junctions with successful and reproducible methods [4][5] . In the case of the characteristics of a junction, the material of the insulating barrier and magnetic layers is very important.…”

Section: Introductionmentioning

confidence: 99%

Study of the Nuclear Magnetic Resonance of Ni/Al + tox O2/Ni Nanoscale Thin Films

Soodmand¹

2016

Orient. J. Chem

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In this paper, The nuclear magnetic resistance study of evaporated Ni / Al + tox O 2 / Ni thin films is investigated duo to the potential application in industry because of their tunneling magnetoresistive characteristics. Results showed that the nuclear magnetic resistance of this metal-insulator-metal thin film structure is useful in determining several important fabrication parameters, such as the Ni crystal structure and the optimal O 2 plasma oxidation time ox of the Al spacer layer.

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Section: Introductionmentioning

confidence: 99%

Study of the Nuclear Magnetic Resonance of Ni/Al + tox O2/Ni Nanoscale Thin Films

Soodmand¹

2016

Orient. J. Chem

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show abstract

Investigation of Basis set Effects on the NMR Chemical Shielding tensors data on (10, 10) SWCNTs Calixarene complexes

Cited by 1 publication

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Study of the Nuclear Magnetic Resonance of Ni/Al + tox O2/Ni Nanoscale Thin Films

Study of the Nuclear Magnetic Resonance of Ni/Al + tox O2/Ni Nanoscale Thin Films

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