Investigation of BGaN Layer in Photodetector Structure

Allam, Zehor; Bouchachia, Badia; Boudaoud, Chahrazad; Hafaifa, Loumafak

doi:10.1080/03772063.2024.2390091

IETE Journal of Research

2024

DOI: 10.1080/03772063.2024.2390091

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Investigation of BGaN Layer in Photodetector Structure

Zehor Allam,

Badia Bouchachia,

Chahrazad Boudaoud

et al.

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2024

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References 27 publications

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Rejection ratio and responsivity of dual-layer III-nitride alloy photodetectors

Allam,

Boudaoud,

Bouchachia

2024

Eng. Res. Express

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The III-Nitride alloys (AlGaN and InGaN) photodetectors with Schottky barriers have been studied, focusing on two structures with active layers: one based on Al₀.₂₅Ga₀.₇₅N/GaN semiconductors and the other on an In₀.₀₅Ga₀.₉₅N/GaN heterostructure. For an overall efficiency of 70%, both proposed devices exhibit remarkable responsivity. The AlGaN structure achieves a responsivity of 111.25 A/W at 2V, while the InGaN device attains 4.302 A/W under the same voltage. At an applied voltage of 8V, the responsivity of the AlGaN device increases to 83.73 A/W, whereas the InGaN device reaches 34.42 A/W. When operating at 10V, the AlGaN structure demonstrates a responsivity of 105 A/W, in contrast to 6.84 A/W for the InGaN device. At room temperature, the visible rejection ratio for the Al₀.₂₅Ga₀.₇₅N/GaN device is 3.33 × 10⁴ at 10V, a high value that indicates the superior performance of the Al₀.₂₅Ga₀.₇₅N photodetector. In comparison, the In₀.₀₅Ga₀.₉₅N/GaN-based photodetector achieved a value of 2.935 at 10V. Additionally, the maximum photocurrent obtained was 3.045 mA for the Al₀.₂₅Ga₀.₇₅N device at 10V and 0.0472 mA for the In₀.₀₅Ga₀.₉₅N device at the same voltage.

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Rejection ratio and responsivity of dual-layer III-nitride alloy photodetectors

Allam,

Boudaoud,

Bouchachia

2024

Eng. Res. Express

View full text Add to dashboard Cite

show abstract

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Investigation of BGaN Layer in Photodetector Structure

Cited by 1 publication

References 27 publications

Rejection ratio and responsivity of dual-layer III-nitride alloy photodetectors

Rejection ratio and responsivity of dual-layer III-nitride alloy photodetectors

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