Investigation of Boron Diffusion from Polycrystalline Silicon

Garben, B.; Orr‐Arienzo, W. A.; Lever, R. F.

doi:10.1149/1.2108359

Cited by 43 publications

(7 citation statements)

References 12 publications

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“…In this sample, the peak B concentration ͑ϳ1.9 ϫ 10 22 cm −3 ͒ located at the projected range R p ͑ϳ260 nm below the surface͒ exceeds the solid solubility of boron in silicon at 900°C ͑ϳ4.5ϫ 10 19 cm −3 ͒. 10 Not all B atoms can go into substitutional sites, leaving the nonsubstitutional atoms to form small boron clusters and other defects, which cause significant de-channeling in the channeling spectra. 11 The ERD spectra ͑not shown here͒ indicate that the amount of hydrogen trapped in the high B dose ͑5 ϫ 10 15 cm −2 ͒ samples with and without activation was almost equal.…”

mentioning

confidence: 81%

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen

Chu

Höchbauer

et al. 2005

Applied Physics Letters

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Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si wafers coated with thermal oxide. In this work, we studied the feasibility of using plasma hydrogenation to replace high dose H implantation for layer transfer. Boron ion implantation was used to introduce H-trapping centers into Si wafers to illustrate the idea. Instead of the widely recognized interactions between boron and hydrogen atoms, this study showed that lattice damage, i.e., dangling bonds, traps H atoms and can lead to surface blistering during hydrogenation or upon postannealing at higher temperature. The B implantation and subsequent processes control the uniformity of H trapping and the trap depths. While the trap centers were introduced by B implantation in this study, there are many other means to do the same without implantation. Our results suggest an innovative way to achieve high quality transfer of Si layers without H implantation at high energies and high doses.

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mentioning

confidence: 81%

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Chen

Chu

Höchbauer

et al. 2005

Applied Physics Letters

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“…Its boron concentration continuously declines from the surface. The surface concentration of the boron emitter matches well the solubility of boron in silicon [55][56][57][58]. Therefore, the used borosilicate glass works as an unlimited diffusion source [59,60].…”

Section: Pecvd Bsg Emitter Diffused-in In Nitrogen Atmospherementioning

confidence: 99%

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

Gloger

Herguth

Engelhardt

et al. 2016

Progress in Photovoltaics

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Boron and phosphorus doping of crystalline silicon using a borosilicate glass (BSG) layer from plasma enhanced chemical vapor deposition (PECVD) and phosphorus oxychloride diffusion, respectively, is investigated. More specifically, the si multaneous and interacting diffusion of both elements through the BSG layer into the silicon substrate is characterized in depth. We show that an overlying BSG layer does not prevent the formation of a phosphorus emitter in silicon substrates during phosphorus diffusion. In fact, a BSG layer can even enhance the uptake of phosphorus into a silicon substrate com pared with a bare substrate.From the understanding of the joint diffusion of boron and phosphorus through a BSG layer into a silicon substrate, a model is developed to illustrate the correlation of the concentration dependent diffusivities and the emerging diffusion pro files of boron and phosphorus. Here, the in diffusion of the dopants during diverse doping processes is reproduced by the use of known concentration dependences of the diffusivities in an integrated model. The simulated processes include a BSG drive in step in an inert and in a phosphorus containing atmosphere.Based on these findings, a PECVD BSG/capping layer structure is developed, which forms three different n ++ , n + and p + doped regions during one single high temperature process. Such engineered structure can be used to produce back contact solar cells.

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“…The limiting boron solubility in solid silicon was determined from X ray phase analysis [13,14], nuclear reactions [15], transmission electron micro scopy [16], secondary ion mass spectrometry [17], electric resistance measurements [18][19][20], and the Hall effect [18,19] (Fig. 1).…”

Section: The Si-b Systemmentioning

confidence: 99%

Analyzing the phase composition of Si-B and Si-B-Ti alloys based on silicon

Arutyunyan

Зайцев

Shaposhnikov

2012

Russ. J. Phys. Chem.

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An interally consistent analysis of the available data on the conditions of the equilibrium of phases and thermodynamic properties of Si-B alloys based on silicon is performed. Phase equilibria in the Si-B-Ti system in the temperature and concentration regions of the existence of solid solution based on silicon are calculated using the obtained data. Conditions for the precipitation of titanium diboride from Si-B-Ti solid solution at 1523 K are found.Keywords: phase equilibria, solid solution of boron in silicon, thermodynamic properties, impurities in silicon.

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Investigation of Boron Diffusion from Polycrystalline Silicon

Cited by 43 publications

References 12 publications

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

Analyzing the phase composition of Si-B and Si-B-Ti alloys based on silicon

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