Investigation of Boron Distribution at the SiO<sub>2</sub>/Si Interface of Monolayer Doping

Hsu, Shu‐Han; Wan, Chia-Chen; Cho, Ta-Chun; Lee, Yao-Jen

doi:10.1021/acsomega.0c05282

Cited by 7 publications

(9 citation statements)

References 19 publications

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“…Therefore, the monolayer layer doping method can provide a solution to achieve conformal doping. Taking learning from the previous work, 11 this monolayer doping methodology is applied to the Ge surface to validate the device's performance. The surface of the Ge nanosheet can be selectively modified by monolayers while leaving the metal gate area free from modification.…”

Section: Resultsmentioning

confidence: 99%

“…It is a challenge to control the dopant distribution in nanoscale transistors precisely. Few monolayer doping methods demonstrated enhanced doping efficiency with controllable shallow junction formation. − Among all the techniques, an oxide layer capping after the monolayer doping process appears to play a significant role in efficient doping. , Besides, sufficient energy needs to be used to activate the dopant diffusion and rapid thermal annealing (RTA) provides a low thermal budget to limit the diffusion. RTA can provide sufficient energy for the activation of dopants while limiting the dopant diffusion to achieve shallow junction formation.…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors

Chu

Luo

Chou

et al. 2022

ACS Appl. Electron. Mater.

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Monolayer doping (MLD) allows devices with complex-geometry structures like nanopillar arrays, nanofins, and nanosheets to be created. These are some of the devices that might be used in next-generation semiconductor technology. Horizontally stacked nanosheet gate-all-around field-effect transistors (GAA FETs), same as gate-all-around nanowire FETs (GAA NW-FETs) technology, have the capacity to extend the technology node down to 5 nm with a good short channel control, which is the current constraint of the existing FinFET. Low-dimensional Ge structures have also attracted a lot of interest with their superior electrical properties compared to standard Si devices. As a result, a fabrication scheme combining high-quality Ge/Si multilayer epitaxy, excellent selective etching control, crystallization by forming gas annealing, and conformal monolayer doping has been demonstrated, allowing for the formation of multilayer stacking of Ge nanosheet gate-all-around field-effect transistors (p-GAA FETs). The crystalline Ge nanosheet is characterized by transmission electron microscopy, and excellent electronic properties are demonstrated using boron-containing molecules for conformal doping to overcome the geometry limitation with two different gate length channels. These successful representations of GAA devices achieved by conformal monolayer doping methodologies can provide significant information for developing emerging three-dimensional (3D) integrated Ge nanodevices beyond a 5 nm generation node.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors

Chu

Luo

Chou

et al. 2022

ACS Appl. Electron. Mater.

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“…[20] The possible mechanisms of free carrier removal in a COII getter layer of both n-and p-type moderately doped silicon substrates are related to the carbon atom binding with phosphorous and to the oxygen atom binding with boron at high-temperature annealing, respectively. [21][22][23][24] In addition, the local expansion under the mask along the surface and the SCR depth weakly depend on the substrate conductivity and are determined only by the implantation region and the energy of CO þ molecular ions, reaching a depth of >1 μm for an ion energy value >500 keV. The large SCR depth is useful for the RF IC and flash applications, but the nature of the high-temperature stability of the SCR is still to be determined.…”

Section: Discussion Of the Electrical Properties Of Si And Soi With A...mentioning

confidence: 99%

“…The possible mechanisms of free carrier removal in a COII getter layer of both n‐ and p‐type moderately doped silicon substrates are related to the carbon atom binding with phosphorous and to the oxygen atom binding with boron at high‐temperature annealing, respectively. [ 21–24 ]…”

Section: Discussion Of the Electrical Properties Of Si And Soi With A...mentioning

confidence: 99%

Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO⁺ Ion Implantation

Popov

Tarkov

Tikhonenko

et al. 2021

Physica Status Solidi (a)

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Using nanoscale inclusions of a wide‐band SiC semiconductor and SiO2 dielectric formed in CO+ molecular ion‐implanted (COII) layers allows creating highly resistive regions inside a moderate‐doped silicon substrate. Contrary to the well‐known implanted proton or argon‐ion insulation, where the high resistance is provided by the unstable radiation defect Fermi‐level pinning, such two‐type antidots form a bend of the silicon bandgap on the heteroboundaries around them, similar to the insulating layer in the p−n junction, and guarantee the absence of mobile charge carrier transport at a certain concentration of antidots and working temperatures below 400 K. These insulating regions save their properties even after hard thermal treatment (1400 K). Moreover, a gas blistering suppression is observed for the silicon‐on‐insulator (SOI) wafers with an ultrathin (10–40 nm) buried oxide (BOX). SIMS measurements demonstrate the strong mobile impurity accumulation at the COII region during subsequent thermal treatments.

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“…Preliminary investigations on the process efficiency have been performed. Metallurgical junctions with depths as small as 5 nm and 10 nm, respectively, for n+ and p+ doping, with doping concentrations of the order of 10

have been demonstrated [ 20 , 21 , 22 , 23 ]. MD has also been used for the realization of Si nanowire-based solar cells [ 2 ] and as a valid doping technique for many geometries and other applications [ 9 , 10 , 17 , 24 ].…”

Section: Introductionmentioning

confidence: 99%

Study of the Molecule Adsorption Process during the Molecular Doping

et al. 2021

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Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules–substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.

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Investigation of Boron Distribution at the SiO₂/Si Interface of Monolayer Doping

Cited by 7 publications

References 19 publications

Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors

Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors

Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO⁺ Ion Implantation

Study of the Molecule Adsorption Process during the Molecular Doping

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Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping

Cited by 7 publications

References 19 publications

Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors

Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors

Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO+ Ion Implantation

Study of the Molecule Adsorption Process during the Molecular Doping

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Investigation of Boron Distribution at the SiO₂/Si Interface of Monolayer Doping

Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO⁺ Ion Implantation