Abstract:In this work, the capacitance-voltage ͑C-V͒ characteristics of Cu/2,2Ј-bis-͑3,4-dicarboxyphenyl͒ hexafluoropropane dianhydride ͑6FDA͒-p-phenylene diamine ͑PPD͒/Si metal-insulator-semiconductor ͑MIS͒ capacitors after different annealing processes are investigated. During annealing ͑in N 2 + H 2 ambient and in vacuum͒, positive charges are generated in the capacitors and it leads to a shift of flatband voltage ͑V FB ͒ toward the negative-bias direction. However, the V FB of the annealed samples moves backward ͑t… Show more
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