Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2013
DOI: 10.1109/ipfa.2013.6599127
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Investigation of chromium contamination induced TDDB degradation in MOSFET

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“…7 Additionally, Cr contamination results in reliability degradation of the gate dielectric. 8 Furthermore, the presence of these metal ions impacts the gate oxide quality of ICs. 9 Therefore, the maximum concentration of these metallic impurities in the processing liquid should be maintained at sub ppb levels.…”
mentioning
confidence: 99%
“…7 Additionally, Cr contamination results in reliability degradation of the gate dielectric. 8 Furthermore, the presence of these metal ions impacts the gate oxide quality of ICs. 9 Therefore, the maximum concentration of these metallic impurities in the processing liquid should be maintained at sub ppb levels.…”
mentioning
confidence: 99%