2023
DOI: 10.1016/j.ceramint.2023.03.239
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Investigation of crystal structure, electrical and dielectric response of Ga3+ substituted Sr–Ni Y-type hexaferrites as a suitable material for high frequency applications

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Cited by 26 publications
(2 citation statements)
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“…At a frequency of 10 GHz, the dielectric tangent loss increases, some resonance peaks appear as the dielectric tangent loss increases, and some resonance peaks appear due to the matching between the applied frequency and the frequency of the electron hopping inside the material. 27 The trend of tan (μ) is almost consistent with that of tan (ε). At lower frequency ranges, the magnetic resonance of materials is limited by the frequency, which hinders the magnetic performance of the materials.…”
Section: ■ Results and Discussionsupporting
confidence: 63%
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“…At a frequency of 10 GHz, the dielectric tangent loss increases, some resonance peaks appear as the dielectric tangent loss increases, and some resonance peaks appear due to the matching between the applied frequency and the frequency of the electron hopping inside the material. 27 The trend of tan (μ) is almost consistent with that of tan (ε). At lower frequency ranges, the magnetic resonance of materials is limited by the frequency, which hinders the magnetic performance of the materials.…”
Section: ■ Results and Discussionsupporting
confidence: 63%
“…Due to the resistive properties of grain boundaries, they act as obstacles for charge carriers, requiring sufficient energy for successful hopping. At a frequency of 10 GHz, the dielectric tangent loss increases, some resonance peaks appear as the dielectric tangent loss increases, and some resonance peaks appear due to the matching between the applied frequency and the frequency of the electron hopping inside the material . The trend of tan (μ) is almost consistent with that of tan (ε).…”
Section: Resultssupporting
confidence: 54%