Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy

Praseuth, J.P.; Goldstein, Leon J.; Hénoc, P.; Primot, J.; Danan, G.

doi:10.1063/1.338859

Cited by 71 publications

(16 citation statements)

References 14 publications

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“…In contrast, the growth windows for other materials are typically much narrower, outside of which we see surface roughening and crystalline defects. 121,122 Note that the GaAs temperature range extends to higher values than InAlAs and InGaAs for some surface orientations. These high temperature ranges are not compatible with indium containing compounds due to their lower decomposition temperature of $550…”

Section: A Effects Of Surface Orientation On Surface Morphologymentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Section: A Effects Of Surface Orientation On Surface Morphologymentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This is a result of the wide dopant distribution in B689 and the correspondingly closer energy separation between states near the top of the potential well. The total increase in the free electron density for sample B689 is thus Ͼ2ϫ10 11 cm Ϫ2 while that for A1337 (N D ϳ5ϫ10 12 cm Ϫ2 ) is 1.6 ϫ10 11 cm Ϫ2 , comparable to the increase after illumination in the two dimensional electron density of an InGaAsInAlAs modulation doped heterostructure reported by Lo et al 7 PPC in InAlAs has been ascribed to both intrinsic [8][9][10] and extrinsic defects; 11,12 for example, native defects involving an As antisite 9 and deep acceptor states 10 have both been proposed. Recently, Sari and Wieder 11 have observed PPC in In 1Ϫx Al x As (0.1рxр0.34) due to DX centers which pin the Fermi level (E F ) to an average energy 0.3 eV below the lowest conduction band minimum.…”

Section: CMmentioning

confidence: 50%

“…The change in the electron density of the iϭ0 subband is very small, ϳ2ϫ10 10 cm Ϫ2 . The iϭ1 and iϭ2 peaks shift to higher frequencies corresponding to increases of ϳ6ϫ10 10 and ϳ1ϫ10 11 cm Ϫ2 , respectively in the electron density occupying these levels after illumination. The iϭ3 peak is resolved after illumination with n 3 ϳ3.7ϫ10…”

Section: CMmentioning

confidence: 99%

Shubnikov–de Haas effect and persistent photoconductivity in In0.52Al0.48As

Skuras

Stanley

Long

et al. 1999

Journal of Applied Physics

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The Shubnikov-de Haas effect in InAlAs measured using pulsed magnetic fields up to 50 T is reported. The InAlAs samples were grown by molecular beam epitaxy ͑MBE͒ and were either ␦ or slab doped with silicon at densities up to 7ϫ10 12 cm Ϫ2 . Comparison of experimental subband densities with those calculated self-consistently shows that spreading of Si occurs by surface segregation at growth temperatures of ϳ520°C, similar to its behavior in MBE-grown InGaAs. In contrast to InGaAs, the InAlAs exhibits persistent photoconductivity which appears to be caused by a bulk defect rather than DX͑Si͒ states. © 1999 American Institute of Physics. ͓S0021-8979͑99͒00423-5͔Shubnikov-de Haas ͑SdH͒ measurements combined with self-consistent calculations ͑SCC͒ have been used to estimate the spreading of Si as a function of growth temperature in ␦-and slab-doped InGaAs.1-3 However, the larger electron effective mass in InAlAs and its lower electron mobility mean that substantially higher magnetic fields are required to resolve the individual subbands for structures doped with comparable donor densities. In this communication, we report the observation of the SdH effect in InAlAs ␦ and slab doped with Si to densities of N Si ϳ7ϫ10 12 cm Ϫ2 . Pulsed magnetic fields up to 50 T were needed to measure peaks due to depopulation of the Landau levels of the iϭ0 subband. A comparison of the SdH data with SCC provides an estimate of Si spreading at growth temperatures T S around 520°C. Persistent photoconductivity ͑PPC͒ due to deep states in the InAlAs has been observed, and evidence is presented which rules against DX͑Si͒ centers as the cause.The Si ␦-and slab-doped InAlAs layers were grown lattice matched on Fe-InP͑100͒ by molecular beam epitaxy ͑MBE͒ in a constant As 2 flux of Ϸ2.0ϫ10 15 molecules cm Ϫ2 s Ϫ1. The growth rate was 1.0 m/h and the growth temperature was varied between T S Ϸ460 and 520°C. A series of 0.5-2.0 m thick InGaAs layers doped uniformly with Si at concentrations ranging from 5ϫ10 16 to 4ϫ10 A 100 Å cap layer of un-InGaAs was grown to assist the formation of ohmic contacts on Hall bars with a 3:1 length to width ratio. The quantum transport measurements were carried out at 4.2 K with a 0-50 T pulsed magnetic field system 4 and at 1.2 K in a 0-13 T superconducting magnet. The electron subband densities n i ϭ2e i /h (iϭ0,1,2,...) were calculated from the peaks in the fast Fourier transform ͑FFT͒ spectra of the SdH data assuming, unresolved spin splitting. i is the magnetic frequency of the ith peak, e is the electron charge, and h is Planck's constant. For the PPC study, the samples were cooled to 4.2 K in the dark, illuminated with a red light emitting diode ͑LED͒ until the zero magnetic field longitudinal resistance stopped increasing, and then measured 1 and 14 h after illumination.Two representative samples, B689 and A1337, have been selected to illustrate the new data. B689 was grown entirely at T S ϳ520°C and was ␦ doped with N Si ϭ7ϫ10 12 cm Ϫ2 . A1337 was ␦ doped to ϳ5ϫ10 12 cm Ϫ2 and was also grown at 520°C,...

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“…The clustering formation occurs because the large difference between In-As and Al-As bond energies. [15,16] At high V/III flux ratios, the broadening of the InAlAs PL band increased, indicating that the density of clusters became important. The observed peak at ∼1.25 eV was attributed to the spatially indirect transition across the interface between the two-dimensional electron states in thin InAsP graded layer (three monolayer and X AS = 2%) at the inverted interface [11,17] and the heavy hole states at the InAlAs side of the interface.…”

Section: Introductionmentioning

confidence: 99%

Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

Sayari¹,

Yahyaoui²,

Oueslati³

et al. 2009

J Raman Spectroscopy

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Micro-Raman measurements have been carried out in order to study the V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by metal-organic chemical vapor deposition (MOCVD). Photoluminescence (PL) studies in InP/InAlAs/InP heterostructures [1,2] show a strong dependence of the PL band linewidth on V/III molar ratio. In addition to the observation of the two-mode behavior and the disorder activated modes in InAlAs alloy, an analysis of Raman spectra shows a line shape broadening and wavenumber shift of Raman peaks for various V/III molar ratios, with minimum linewidth and lattice mismatch occurring at V/III = 50. Also, a strong dependence on the composition modulation of the AlAs-like longitudinal optic (LO AlAs−like ) phonon was observed due to clustering. Calculation of the in-plane strain shows that the lattice mismatch between the epilayer and the substrate is relatively insensitive to flux ratio variation within the range investigated. Therefore, the high arsenic overpressures used have an insignificant adverse effect on the quality of the hetero-interfaces.

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Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy

Cited by 71 publications

References 14 publications

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Shubnikov–de Haas effect and persistent photoconductivity in In0.52Al0.48As

Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

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