Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

It is shown that the dynamics of changes in the state of nickel clusters depends on the temperature of the diffusion maximum and the cooling rate. It was found that with increasing annealing temperature and cooling rate, an increase in density and a decrease in cluster size are observed. In this case, the main attention was paid to the determination of the laws governing the change in the density, size, and structure of clusters from temperature and cooling. The process and dynamics of the interaction of clusters depends on the diffusion coefficient of impurity atoms in the lattice and the level of supersaturation of the solid solution. It has been established that with a change in the annealing temperature from T = 1100℃ to 1250℃, the cluster density increases by almost 1-1.5 orders of magnitude, and their size decreases by a factor of 5–6. It seems to us that to obtain clusters with stable parameters, the optimal cooling rate is 200–300℃.

Section: Figure 2 the Effect Of Cooling Rate On The Parameters Of Nic...mentioning

confidence: 99%

“…The formation of a cluster leads the system to a more equilibrium state with minimal internal energy [1,10]. Therefore, for the formation of clusters of impurity atoms, the following conditions must be fulfilled:…”

Section: Introductionmentioning

confidence: 99%

Influence of Doping Conditions on the Properties of Nickel Atom Clusters

Ismailov,

Saparniyazova,

Kudeshova

et al. 2024

“…Raman scattering has become a standard tool for studying silicon and nanostructured silicon for many years [5,13,14]. Raman studies of nanomaterials provide us with information about energy dispersion, structure, bonding, and disorder [3,16]. In this work, we present the spectra of one-and twophonon Raman scattering of light from single-crystal silicon doped with lutetium (Lu) atoms.…”

Section: Introductionmentioning

confidence: 99%

Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

Daliev,

Utamuradova,

Bahronkulov

et al. 2023

Self Cite

In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm‑1 – 1030 cm–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si<Lu> and p-Si<Lu>), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm-1 to 1400 cm-1. This background can change the shape of the observed bands.

Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

Utamuradova,

Daliev,

Daliev

et al. 2023

Self Cite

The effect of thermal treatment on the behavior of samarium atoms introduced into silicon during the growth process was studied using the method of transient capacitive deep-level spectroscopy (DLTS). It has been shown that various high-temperature treatments lead to the activation of samarium atoms in the bulk of n-Si and the formation of deep levels. The energy spectrum of deep levels arising during heat treatments has been determined. The dependence of the efficiency of formation of these levels in n‑Si<Sm> on the processing temperature has been studied. It was found that the higher the content of samarium atoms in the bulk of silicon at the same high-temperature treatment temperature, the higher the concentration of the deep level EC–0.39 eV. From this, we can conclude that the EC–0.39 eV level is associated with the activation of samarium atoms in the n-Si<Sm> volume.