Investigation of defects formation on different stages of sapphire crystals growth

Malyukov, S. P.; Klunnikova, Y V

doi:10.1088/1742-6596/541/1/012032

Cited by 5 publications

(7 citation statements)

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“…We used various methods for experimental determination of defects in sapphire substrates (size and location of pores and microcracks) obtained by influence of different thermal conditions during sapphire growth: a method of surface acoustic wave (SAW), vibroacoustic method, as well as optical and thermal methods [12].…”

Section: Experimental Investigation Defects In Sapphire and Their Infmentioning

confidence: 99%

“…The sapphire sample was investigated by the thermal method (thermal imager Flir i5) which allowed more accurately determine expected defects [12].…”

Section: Experimental Investigation Defects In Sapphire and Their Infmentioning

confidence: 99%

“…The modes of mechanical treatment significantly affects the defects distribution concentration [11,12]. The depth of the damaged layer was calculated.…”

Section: Experimental Investigation Defects In Sapphire and Their Infmentioning

confidence: 99%

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Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics

Klunnikova¹,

Malyukov²

2018

KEG

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The results of numerical simulation allow to investigate the thermal conditions received by active heaters influence on the thermoelastic stresses and gas inclusions in sapphire. We carried out the experiments for defects detection in sapphire crystals. We suggest the recommendations about sapphire crystals growth and processing improvement for profitability increase in sapphire substrates production for microelectronics.

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Section: Experimental Investigation Defects In Sapphire and Their Infmentioning

confidence: 99%

“…The sapphire sample was investigated by the thermal method (thermal imager Flir i5) which allowed more accurately determine expected defects [12].…”

Section: Experimental Investigation Defects In Sapphire and Their Infmentioning

confidence: 99%

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Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics

Klunnikova¹,

Malyukov²

2018

KEG

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“…The possible mechanism of the bubble removal may be associated with the first round solidification of the melt as follows. According to [17], only relatively small bubbles formed on the solidification front are captured by the grown crystal, while bigger ones are rejected from the growth interface back to the melt remaining in the crucible. Size of the captured bubbles depends on the solidification rate, and greater growth rate corresponds to larger bubbles that can be captured by the growing crystal.…”

Section: Bubble Capturementioning

confidence: 99%

Growth of 2 Inch Eu-doped SrI2 single crystals for scintillator applications

Yoshikawa

Shoji

Yokota

et al. 2016

Journal of Crystal Growth

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A vertical Bridgman (VB) crystal growth process was established using modified micropulling-down (μ-PD) crystal growth system with a removable chamber that was developed for the growth of deliquescent halide single crystals because conventional μ-PD method does not allow growth of large bulk single crystals. Eu:SrI 2 crystals were grown from the melt of (Sr 0.98 Eu 0.02 )I 2 composition using carbon crucibles. Undoped μ-PD SrI 2 crystals were used as seeds that were affixed to the bottom of the crucible. All the preparations preceding the growths and the hot zone assembling were performed in a glove box with Ar gas. Then the removable chamber was taken out of the glove box, attached to the μ-PD system, connected with a Turbo Molecular pump, and evacuated down to 10 -4 Pa at ~300°C. After the baking procedure, high purity Ar gas (6N) was injected into the chamber. The crucible was heated by a high frequency induction coil up to the melting point of Eu:SrI 2 . After melting the starting materials, the crucible was displaced in downward direction for the crystal growth and then cooled down to room temperature. Thus, 2 inch and crack-free Eu:SrI 2 bulk crystals were produced. The crystals had high transparency and did not contain any visible inclusions.The crystals were cut and polished in the glove box and then sealed in an aluminum container with an optical window for characterization. The details of the crystal growth are discussed.

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“…The analysis of thermophysical processes during sapphire crystals growth by HDC method is under investigation for several years. [1][2][3][4][5][6] Only few theoretical works describe the causes of defects formation in sapphire crystals [7][8][9][10][11][12][13][14][15][16][17] but some aspects of defects formation should be considered in a more detailed manner. The aim of this contribution is the analytical and experimental study of shape factor influence on sapphire crystal growth by HDC method.…”

Section: Introductionmentioning

confidence: 99%

Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method

et al. 2020

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This research summarizes the analytical and experimental results of heat-transfer processes influence on defects formation during sapphire crystal growth by horizontal directed crystallization method (HDC). The shape of solid-melt interface significantly influences the process of sapphire crystals growth by this method. We receive the Stefan problem solution for sapphire crystals growth. It allows investigating the crystal growth process and the related factors (thermal stresses on different stages of growth process), their influence on defects formation. We investigate the main reasons for the formation of defective structures of the solid phase of sapphire crystals and the influence of thermal unit construction, the crystal geometry on the quality of the resulting sapphire crystal. We study the structure formation process, impurity distribution, and the nature of the defects in the crystal during it growth.

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Investigation of defects formation on different stages of sapphire crystals growth

Cited by 5 publications

References 0 publications

Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics

Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics

Growth of 2 Inch Eu-doped SrI2 single crystals for scintillator applications

Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method

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