Investigation of deformations and strain fields in silicon matrix structures embedded with vertically stacked Ge(Si) self-assembled islands

Abstract

Elastic strains have been measured quantitatively and clearly demonstrated, resulting in vertical stacking of Ge(Si) self-assembled islands in a silicon matrix using the geometric phase analysis method. The strains are calculated on the basis of the data on the elemental composition and crystal-lattice distortions. An empirical approach on the basis of the experiment has allowed the determination of geometric phase method in accuracy.

Highly stable photovoltaic effects in A2+–Zr4+ (A = Ca, Sr, Ba) co-doped BiFeO3 films with self-polarization

“…The fast Fourier transform (FFT) pattern of the local region and the inverse FFT image were used to achieve a geometric phase analysis (GPA) of the local lattice strains. 34,35 Local strain maps e xx and e yy are shown in the right in Fig. 2(a), where, x and y directions are defined along [001] and [100], and the same analysis of the BFO film is shown in Fig.…”

Enhanced Fill Factor and Power Conversion Efficiency of Single Oxide Ferroelectric Photovoltaic Devices with Designed Nanostructures

“…The inverse Fast Fourier Transform (FFT) pattern of the nanocrystalline region delineated with the yellow box in Figure 2e is shown in Figure 2f, which was selected to conduct a detailed geometric phase analysis (GPA) of the local lattice strains. [33,34] The maps of the local strain fields (e yy and e xx ) are shown in the left image of Figure 2g,h, where x and y directions are defined along [100] and [001], respectively. It can be observed that there are nanoscale alternating distortion regions of compressive and tensile strains in e yy and e xx maps.…”