Investigation of degradation mechanism of Schottky diodes

Lee, Hsin Ying; Lee, Ching-Ting

doi:10.1016/s0038-1101(02)00372-6

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…This positive species passes back through the oxide, but is first incident on the nitrogen rich area of the layer. The generation of traps is somehow suppressed due to the incorporation of nitrogen at the interface in agreement with previous studies [8,9], and so we see only a slight V t shift at high Q inj . When substrate injection is used to stress the oxide, the same process leads to the positive species being released into the less nitrided region and so traps are created more quickly, leading to a substantial V t shift, even at low Q inj .…”

Section: Threshold Voltagesupporting

confidence: 93%

Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

O’Connor

Hughes

Degraeve

et al. 2005

Microelectronic Engineering

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Section: Threshold Voltagesupporting

confidence: 93%

Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

O’Connor

Hughes

Degraeve

et al. 2005

Microelectronic Engineering

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“…In the latter case the interface can be a rectifying (Schottky) contact (5). The quality of Schottky interface plays an important role in the device characteristics (6) and influences the conduction mode of the junction. The interface between metal and semiconductor is very complex and its physical properties depend on surface preparation conditions.…”

Section: Introductionmentioning

confidence: 99%

Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application

et al. 2010

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The design and fabrication of high efficiency low cost electronics components for commercial and industrial applications is very challenging. In this paper we introduce a fabrication of Schottky diode dedicated to high frequency rectification. The devices are prepared on Corning glass substrate with a configuration Au /µc-Si:H /Al and by using microcrystalline silicon as semiconductor. Photolithographic masks are used for diodes fabrication. Two processes are carried out to optimize Schottky diode characteristics. Silicon films are deposited in an usual RF PECVD reactor at low temperature (165°C). Current -voltage (I-V) characteristics are measured and plotted to determine the different parameters of Schottky contact such as ideality factor and rectifying ratio. At 13.56 MHz which is common in RFID frequency application, this Schottky diode in association with parallel load capacitor can be used to build an efficient rectifier.

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Non Ideal Schottky Barrier Diode’s Parameters Extraction and Materials Identification from Dark <i>I-V-T</i> Characteristics

Bashahu¹,

Ngendabanyikwa²,

Nyandwi³

2022

JMP

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Investigation of degradation mechanism of Schottky diodes

Cited by 3 publications

References 16 publications

Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application

Non Ideal Schottky Barrier Diode’s Parameters Extraction and Materials Identification from Dark <i>I-V-T</i> Characteristics

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Investigation of degradation mechanism of Schottky diodes

Cited by 3 publications

References 16 publications

Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application

Non Ideal Schottky Barrier Diode’s Parameters Extraction and Materials Identification from Dark &lt;i&gt;I-V-T&lt;/i&gt; Characteristics

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Product

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Non Ideal Schottky Barrier Diode’s Parameters Extraction and Materials Identification from Dark <i>I-V-T</i> Characteristics