Investigation of dielectric properties in tantalum doped AgNbO₃ ceramic

Abstract

Dielectric materials developed from Tantalum (Ta) doped AgNbO3 (ATN) show excellent properties in variety of electronic technologies. In the temperature range of 70 to 400 °C, four major dielectric abnormalities were observed in ATN (x = 0.1) while in ATN (x = 0.2) the maxima of M1-M2 phase shift to low temperature value. ATN ceramics’ dielectric properties dominate temperature and electric field-based performance, which has a major effect on their properties. This study looked into the dielectric properties in ATN.