Investigation of dielectric relaxation and a.c. conductivity of third generation multi-component Ge10−xSe60Te30Sbx (0 ≤ x ≤ 6) chalcogenide glasses

Singh, Pravin Kumar; Lohia, Pooja; Dwivedi, D. K.

doi:10.1007/s10854-019-01763-6

Cited by 5 publications

(3 citation statements)

References 45 publications

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“…At room temperature, the exponent r values ranged from 0.7 to 1, with a tendency to reduce as temperature increased. A great matching with the most chalcogenide semiconductor glasses behavior exists as indicated by numerous other investigations [33][34][35]. The parameter r values as its frequency and temperature reliance, are utilized to discover the class of applied conduction mechanism in the analyzed thin-film samples, which is the correlated barrier hopping CBH-model [36][37][38][39].…”

Section: Acmentioning

confidence: 90%

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Mohamed,

Atyia

2024

Phys. Scr.

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The current research investigates the conductivity σ AC of glassy As4Ge24Te72 thin films through a combined experimental and theoretical approach. It sheds light on the complex relationship between σ AC , frequency, temperature, and film thickness. Analysis reveals that σ AC follows ω r law and exhibits hopping behavior. To effectively model and predict σ AC , an adaptive neuro-fuzzy inference system (ANFIS) is utilized. The ANFIS model successfully simulates the experimental data, showing high accuracy. Additionally, the prediction of experimentally measured values of σ AC is processed as a testing step and provides acceptable results. That enables ANFIS to enlarge the scale and complete the missing parts in the trained datasets by predictions for unmeasured σ AC values. The ANFIS network was built using MATLAB-R2017a. It consists of two inputs (frequency and temperature) and one output (AC conductivity). The precision is confirmed by calculating the modeling errors across the training process. The mean absolute errors MAE through the modeling process are not exceeding 10 − 5 . This average error value demonstrates the model’s effective ability. The alignment between experimental and ANFIS modeling results open up exciting possibilities for future research. By predicting the properties of the understudy material using ANFIS model, we can pave the way for more compact and efficient electrical devices.

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Section: Acmentioning

confidence: 90%

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Mohamed,

Atyia

2024

Phys. Scr.

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“…Similar results have also been reported in other research studies. 43,[47][48][49]51 4.2 Temperature and frequency dependence of dielectric loss (e 2 )…”

Section: (B) Intimate Valence Alternation Pairs (Ivaps)mentioning

confidence: 99%

“…Our results are in agreement with the reported results of other researchers. 24,29,51 4.5 Modification of the dielectric constant (e 1 ), dielectric loss (e 2 ), and AC conductivity (r ac ) with composition Sc was incorporated in Ge-Te-Se-Sc alloys and the consequent changes in the dielectric loss and dielectric constant were analyzed. It is noted that the dielectric constant (e 1 ) and dielectric loss (e 2 ) of Ge-Te-Se-Sc alloys increases with Sc concentration.…”

Section: Calculation Of the Distribution Parameter (A) And Relaxation...mentioning

confidence: 99%

Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

Agarwal,

Lohia,

Dwivedi

2023

New J. Chem.

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AC conductivity and dielectric properties of InxTe20−xSe80 chalcogenides

Afify,

Farag,

Abo-Ghazala

et al. 2023

Indian J Phys

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Chalcogenide samples with chemical formula InxTe20−xSe80 (x = 5, 10 and 15 at %) were prepared using melt quenching method. AC conductivity σ, dielectric constant κ and loss tangent tanδ were measured using two probe method in frequency range from 100 Hz to 5 MHz and temperature range from 26 to 100 °C. All samples exhibited usual dispersion and temperature variation of chalcogenides. Conduction activation energy E was determined from temperature dependence of conductivity using Arrhenius relation. Conductivity, activation energy, dielectric constant and loss tangent decreased with increasing In-content.

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Investigation of dielectric relaxation and a.c. conductivity of third generation multi-component Ge10−xSe60Te30Sbx (0 ≤ x ≤ 6) chalcogenide glasses

Cited by 5 publications

References 45 publications

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

AC conductivity and dielectric properties of InxTe20−xSe80 chalcogenides

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Investigation of dielectric relaxation and a.c. conductivity of third generation multi-component Ge10−xSe60Te30Sbx (0 ≤ x ≤ 6) chalcogenide glasses

Cited by 5 publications

References 45 publications

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Enhancement of dielectric relaxation and AC conductivity of Te(1−x)(GeSe0.5)Scx (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant

AC conductivity and dielectric properties of InxTe20−xSe80 chalcogenides

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Enhancement of dielectric relaxation and AC conductivity of Te_(1−x)(GeSe_0.5)Sc_x (0 ≤ x ≤ 0.15) chalcogenide glasses by a rare-earth dopant