Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements

Asar, Yasemin Şafak; Sevgili, Ömer; Altındal, Ş.

doi:10.1007/s10854-023-10320-1

Cited by 4 publications

(1 citation statement)

References 36 publications

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“…The studied Al/PbO/SnO 2 /p-Si Schottky structures were created on a p-type Si (100) wafer with a thickness of 280 μm and 1–10 ohm. Ohmic contact and the cleaning procedures were described in refs and . To build the SnO 2 layer on the Si substrate after ohmic contact, a solution containing 27.44 wt % stannic chloride (SnCl 4 ·5H 2 O), 32.21 wt % ethyl alcohol (C 2 H 5 OH), and 40.35 wt % deionized water (H 2 O) was sprayed to the substrate at 400 °C.…”

Section: Experimental Methodsmentioning

confidence: 99%

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

Akay,

Seven,

Gökmen

et al. 2023

ACS Appl. Nano Mater.

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This study examines the high-frequency-dependent characteristics of the PbO/SnO 2 double-layer semiconductor (DLS) structures. Recently, researchers have been particularly interested in such structures in terms of their use in electrical and photovoltaic applications. A PbO/SnO 2 double layer was successfully coated on a p-type Si substrate (100) wafer with a resistance of 10 Ω cm and a thickness of 280 μm. The Al Schottky (round dot) connections, which have a thickness of 124 nm and a diameter of 1.3 mm, were produced by thermal evaporation. The present study proposes to measure the conductance−voltage (G−V) and capacitance−voltage (C−V) values of the studied Al/PbO/SnO 2 /p-Si Schottky diode for the frequencies of 500 kHz, 800 kHz, and 1 MHz at a temperature of 300 K, which has been suggested for the first time in literature. Due to the presence of surface states (N ss ), PbO/SnO 2 double-layer, and series resistance R s , the C−V and G−V plots show inversion, depletion, and accumulation zones depending on the strong frequency for each frequency tested. Based on the tested frequencies, the reverse-biased C 2 −V curves are used to compute the fundamental electrical characteristics of the Al/PbO/SnO 2 /p-Si structures, including the depletion layer (W D ), Fermi energy level (E F ), diffusion potential (V D ), and thickness barrier height (⌀ B ). We also investigated the capacitance features and the energy density distribution of surface states (N ss ) in the PbO/SnO 2 double-layer structure by utilizing the measured values of G−V and C−V. The values of ⌀ B , V D , and N ss were observed to be 0.54 0.34, and 3.19 10 12 eV −1 cm −2 at 500 kHz, while they were 0.88 0.68, and 1.96 eV −1 cm −2 at 800 kHz and 0.95, 0.75, and 1.47 eV −1 cm −2 at 1 MHz, respectively. It was discovered that the capacitance characteristics of the PbO/SnO 2 double-layer structure were substantially dependent on the applied high frequencies. Furthermore, the C−V and G−V measurements revealed that the series resistance and the interface state density of the studied Al/PbO/SnO 2 /p-Si Schottky diode were critical parameters that significantly affect the electrical parameters offered by the PbO/SnO 2 double-layer nanostructure. The results of the study reveal that the manufactured device exhibits outstanding electric characteristics and support the possibility of using DL thin films in electronic devices.

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Section: Experimental Methodsmentioning

confidence: 99%

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

Akay,

Seven,

Gökmen

et al. 2023

ACS Appl. Nano Mater.

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The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe:PVA)/n-Si (MPS) structures

Güçlü,

Altındal,

Ulusoy

et al. 2024

J Mater Sci: Mater Electron

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The dielectric properties, electric modulus, loss tangent (tanδ), and ac conductivity of the fabricated Au/(CdTe:PVA)/n-Si (MPS) structures were investigated in wide-range frequency. By using the capacitance/conductance–voltage–frequency (C/G-V-f) measurements, the real/imaginary components of complex dielectric constant (εʹ, εʺ)/electrical modulus ($$M{\prime}$$ M ′ , $$M{\prime}{\prime}$$ M ′ ′ ), loss tangent (tanδ), and σac were calculated in wide-range frequency (2 kHz–0.7 MHZ) and voltage (± 2.5 V), and all results show that these parameters are a strong function of voltage and frequency. The observed decreases of εʹ and εʺ with increasing frequency were attributed to the existence of Nss, interlayer, and dipole polarizations. The value of εʹ was calculated as 128.38 (at 2 kHz and 2.5 V), which is quite higher than the maximum value of traditional SiO2. ln(σac)–ln(f) plot for 0.7 V shows three linear parts, indicating three different conduction mechanisms at low, intermediate, and high frequencies. These results show that the fabricated MPS structures can be successfully used instead of traditional metal–insulator–semiconductor as ultra-capacitors, which can use more electronic charges or energy.

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Study of Thermal, Structural, and Above-Room-Temperature Dielectric Properties of Mg-Cd-Cu Spinel Ferrites Under Different Annealing Temperatures

Missaoui,

Hcini,

Alzahrani

et al. 2024

J. Electron. Mater.

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Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements

Cited by 4 publications

References 36 publications

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe:PVA)/n-Si (MPS) structures

Study of Thermal, Structural, and Above-Room-Temperature Dielectric Properties of Mg-Cd-Cu Spinel Ferrites Under Different Annealing Temperatures

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