Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs

Shi, Limeng; Zhu, Shengnan; Qian, Jiashu; Jin, Michael; Bhattacharya, Monikuntala; White, M.H.; Agarwal, Anant; Shimbori, Atsushi; Liu, Tianshi

doi:10.1109/irps48203.2023.10118276

Cited by 8 publications

(2 citation statements)

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“…model [31]. This will also provide a theoretical basis for suggesting the industry adopt more aggressive screening methods to more effectively screen out extrinsic defects in thermal gate oxide according to the more optimistic lifetime prediction [32].…”

Section: Devices Under Test (Duts)mentioning

confidence: 97%

“…Additionally, the lifetime prediction model established based on this failure mechanism can be considered more credible even if it is not as conservative as the thermochemical E model [31]. This will also provide a theoretical basis for suggesting the industry adopt more aggressive screening methods to more effectively screen out extrinsic defects in thermal gate oxide according to the more optimistic lifetime prediction [32].…”

Section: Introductionmentioning

confidence: 99%

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Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Qian,

Shi,

Jin

et al. 2024

Materials

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The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of thermally grown silicon dioxide (SiO2) on SiC stressed with a constant voltage is indicated as charge driven rather than field driven through the observation of Weibull Slope β. Considering the importance of the accurate failure mechanism for the thermal gate oxide lifetime prediction model of time-dependent dielectric breakdown (TDDB), charge-driven breakdown needs to be further fundamentally justified. In this work, the charge-to-breakdown (QBD) of the thermal gate oxide in a type of commercial planar SiC power MOSFETs, under the constant current stress (CCS), constant voltage stress (CVS), and pulsed voltage stress (PVS) are extracted, respectively. A mathematical electron trapping model in thermal SiO2 grown on single crystal silicon (Si) under CCS, which was proposed by M. Liang et al., is proven to work equally well with thermal SiO2 grown on SiC and used to deduce the QBD model of the device under test (DUT). Compared with the QBD obtained under the three stress conditions, the charge-driven breakdown mechanism is validated in the thermal gate oxide of SiC power MOSFETs.

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Section: Devices Under Test (Duts)mentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%