Investigation of dislocation structures in ribbon- and ingot-grown multicrystalline silicon

Schmid, E.; Funke, Claudia; Behm, T.; Pätzold, O.; Berek, Harry; Stelter, Michael

doi:10.1016/j.jcrysgro.2013.07.036

Cited by 9 publications

(7 citation statements)

References 20 publications

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“…Due to the long growth time of DS mc-Si, further ingot or wafer annealing has little effect on dislocations, on both their density and structures. [41][42][43] In other words, as the ingot is grown, it would be very difficult to remove the dislocation clusters by thermal treatment, and this behavior is very different from metals. To illustrate this, Reimann et al 43 recently carefully designed experiments and revealed the dislocations by various etchants.…”

Section: Dislocations and Clustersmentioning

confidence: 99%

Engineering silicon crystals for photovoltaics

et al. 2016

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Section: Dislocations and Clustersmentioning

confidence: 99%

Engineering silicon crystals for photovoltaics

et al. 2016

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“…In this context, recent work has focused on the improvement of multicrystalline silicon (mc-Si) which presents an interesting €/Watt ratio in the production of photovoltaic panels [1,2]. However, mc-Si has an extremely heterogeneous grain structure that directly affects the solar cell efficiency via defects such as grits [3], grain boundaries, impurity segregation [4] and dislocations [5,6]. The knowledge of solidification mechanisms is essential and allows control of the final grain arrangement, the occurrence of structural defects and thus the final solar cell efficiency.…”

Section: Introductionmentioning

confidence: 99%

On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification

Riberi-Béridot

Mangelinck‐Noël

Tandjaoui

et al. 2015

Journal of Crystal Growth

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International audienceGrain orientation and competition during growth has been analyzed in directionally solidified multi-crystalline silicon samples. In situ and real-time characterization of the evolution of the grain structure during growth has been performed using synchrotron X-ray imaging techniques (radiography and topography). In addition, Electron Backscattered Diffraction has been used to reveal the crystalline orientations of the grains and the twin relationships. New grains formed during growth have two main origins: random nucleation and twinning. It is demonstrated that the solidified samples are dominated by ∑3 twin boundaries showing that twinning on {111} facets is the dominant phenomenon. Moreover, thanks to the in situ characterization of the growth, it is shown that twins nucleate on {111} facets located at the sides of the sample and at grain boundary grooves. The occurrence of multiple ∑3 twins during growth prevents the initial grains from developing all along the sample, and twin boundaries with higher order coincidence site lattices can form at the encounter of two grains in twin position. The grain competition phenomenon following nucleation and twinning acts as a grain selection mechanism leading to the final grain structure

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“…Electron back-scattering diffraction (EBSD) is frequently used for simultaneous observation of defect morphology and crystallographic features [48]. An atomicresolution transmission electron microscope (TEM) with high voltage provides high-resolution observation of dislocation activities at a theoretical resolution of up to $ 1.9 Å [49].…”

Section: Microscopic Analysesmentioning

confidence: 99%