Investigation of effects of phosphor particles on optimal design of surface‐mount‐device light‐emitting diode packaging using ray‐tracing simulation

Kashiwao, Tomoaki; Hiura, Mayu; Ikeda, Kenji; Deguchi, Masahiro; Bahadori, Alireza

doi:10.1049/iet-opt.2017.0051

Cited by 1 publication

(2 citation statements)

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“…Only a fraction is able to escape from the chip, due to internal reflection and absorption. Ray tracing models are often employed to calculate LEE [ 93 , 94 , 95 ]. However, ray optics fails when structures as small as the photon wavelength are involved.…”

Section: Light Extraction Modelsmentioning

confidence: 99%

“…In such cases, Maxwell’s equations are usually solved employing the Finite-Difference Time-Domain (FDTD) method, in particular for nano-wire LEDs [ 96 ] and photonic-crystal LEDs [ 97 ]. Tailored models have been developed for textured LED surfaces [ 98 , 99 ] and for the influence of Phosphor layers outside the semiconductor chip [ 95 , 100 ]. Some models also include photon recycling, i.e., their re-absorption by the quantum wells [ 101 ].…”

Section: Light Extraction Modelsmentioning

confidence: 99%

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Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Piprek¹

2020

Materials

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Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.

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Section: Light Extraction Modelsmentioning

confidence: 99%