Investigation of Electrical and Structural Properties of Ag/TiO2/n-InP/Au Schottky Diodes with Different Thickness TiO2 Interface

Abstract

In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes are investigated. Particle size, d-spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO2 interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.

Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction

“…An appropriate thickness is helpful for the construction of devices with a better rectifying ratio. 38,39 In our study, as the TiO 2 thickness increases, the Schottky barrier height and contact resistance can be reduced; however, the thicker TiO 2 has a larger series resistance leading to the degradation of device performance at the contact. 40 As a result, 5 nm-TiO 2 should be just appropriate for obtaining the largest rectifying ratio by balancing the effects on the Schottky barrier height and series resistance simultaneously.…”

“…S4). An appropriate thickness is helpful for the construction of devices with better rectifying ratio [38][39] . In our work, as the TiO 2 thickness increases, the Schottky barrier height and contact resistance can be reduced; however, the thicker TiO 2 has a larger series resistance leading to the degradation of device performance at the contact 40 .…”

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

“…where A * is the Richardson constant (24 Acm −2 K −2 ), and A is the device area (in our case, 2.49 × 10 −3 cm 2 ) [39]. The value of J o and n may be deduced from the intercept of the semi-log plot of J-V characteristics (see figure 4(b)) [43]. The value of J o is found to be increasing with increasing the deposition temperature, which suggests an increase in charge carrier recombination.…”

Analysis of Dislocation Density for GaN Based HEMTs in Screw Mod

“…Dielectric layer between metal and semiconductor converts metal-semiconductor (MS) structure to metal insulator semiconductor (MIS) structure. The interface layer with increasing thickness is in equilibrium with the semiconductor (Bilgili et al, 2022).…”