Investigation of electrical, photodiode and photovoltaic properties of Au/SiO2/n-Si structures with GO and P3C4MT interface

The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

“…Since the selected diode has much less leakage current in the dark, both S and D * values are quite satisfactory. 86 − 88 Still, it is seen that it depends on the illumination intensities proportionally with R values (see Figure 11 b). 89 Furthermore, the D * value of the diode was found to be 5.53 × 10 9 Jones under 120 mW cm –2 at zero bias voltage (self-powered mode), which is the situation where no voltage is applied to the structure and the charge carriers create photocurrent only with the diffusion effect.…”

A comparative study of the Au/n-Si (MS) and Au/(ZnO:CeO2:PVP)/n-Si (MPS) Schottky structures by using current/voltage characteristics in dark and under illumination

“…To improve the performance of these diodes and to increase their efficiency, scientists have been giving increasing attention to this field. For this purpose, recently, researchers have begun to use high-dielectric pure or metal (Ni, Zn, Co, graphene, nano-graphite (NG) and metal-oxide (MnO, ZnO, Al 2 O 3 , CeO 2 , RuO 2 , GO) -doped polymers instead of low-dielectric classical insulators between the metal and the semiconductor [1][2][3][4][5][6][7][8][9][10][11]. However, the performance of these diodes depends on a multitude of parameters such as the dielectric permittivity and thickness of the interlayer, the shunt and series resistances (R sh , R s ) of the sample, the nature of the barrier at the M/S interface, the concentration of doping atoms, the ratio of metal or metal oxide into the polymer, the applied electric field, frequency, and temperature [12][13][14][15].…”