Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

Abstract

In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm2. The forward voltages (VF) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm2. The size and structure-dependent effects were subsequently investigated to optimize the device design. The reliability of Micro-LED devices was evaluated under long-aging, high-temperature, and high-humidity conditions. It was found that Micro-LED devices can maintain comparable performance with an emission wavelength of about 445 nm and a full width at half maximum (FWHM) of 22 nm under extreme environments. Following this, specific analysis with four detailed factors of forward voltage, forward current, slope, and leakage current was carried out in order to show the influence of the different environments on different aspects of the devices.

53.3: Investigation of AlGaN‐based Deep‐UV Micro‐LED as Highly Efficient Excitation Source for Green Perovskite Quantum Dots Display

“…The current-voltage (I-V) characteristic of the fabricated Deep-UV Micro-LED devices was measured using the Agilent B1500A semiconductor parameter analyzer. Figure 4 shows the performance of Deep-UV Micro-LED in different sizes from 200×200 μm 2 to 10×10 μm 2 . With the increase of device size, the device carries a higher injection current at the same voltage, which is due to the larger p-electrode and mesa region.…”

Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture

“…The micro-LED display utilizes existing LED technology, which is significantly more efficient at producing light compared to OLED, cathode ray tube (CRT), and other display technologies. The huge opportunity in consumer electronics and the increasing applications in virtual reality, wearable devices, augmented reality, and medical applications become the major driving force behind the recent rapidly growing development in mini- and micro-LEDs ( Park et al, 2009 ; Scharf et al, 2016 ; Son et al, 2018 ; Roche, 2019 ; Tang et al, 2019 ; Zhang et al, 2020 ). Extensive efforts of research have been devoted to studying the influence of size-reduction in the GaN-based LEDs ( Choi et al, 2003a ; Sadaf et al, 2016 ; Kang et al, 2017 ; Wu et al, 2018 ; Huang et al, 2019 ; Wong et al, 2019 ; Lin and Jiang, 2020 ).…”

P‐61: Size‐Dependence Characterization of GaN‐Based Green MicroLED

“…GaN-based LED devices have received widespread attention due to their outstanding performance such as self-luminescence, high brightness, low power consumption, fast response time and long life. (1)(2)(3)(4) With the development of semiconductor technology, more and more new applications of GaN-based LEDs have been realized, such as visible light communication (VLC) (5), highpower equipment (6) and biomedical field (7). Display applications are still the focus of GaN-based LEDs, especially high-definition displays.…”