Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

Bouslama, Mohamed; Raja, P. Vigneshwara; Gaillard, Florent; Sommet, Raphaël; Nallatamby, Jean-Christophe

doi:10.1063/5.0064493

Cited by 8 publications

(11 citation statements)

References 45 publications

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“…The TCAD Sentaurus is utilized to model the device in this work. Physics‐based models such as drift‐diffusion model for carrier transport, Fermi–Dirac statistics, and Shockley‐Read–Hall (SRH) models for trap‐assisted carrier transport are enabled [18] . The polarization model is also considered because of the spontaneous and piezoelectric polarizations of AlGaN/GaN HEMTs [23,24] .…”

Section: Resultsmentioning

confidence: 99%

“…Physics-based models such as drift-diffusion model for carrier transport, Fermi-Dirac statistics, and Shockley-Read-Hall (SRH) models for trap-assisted carrier transport are enabled. [18] The polarization model is also considered because of the spontaneous and piezoelectric polarizations of AlGaN/ GaN HEMTs. [23,24] Due to the high thermal conductivity of the SiC substrate and the absence of heat accumulation in pulsed I D -V DS characteristics, self-heating is disregarded.…”

Section: Device Structure and Simulationmentioning

confidence: 99%

“…[11][12][13] Surface states can be reduced through different surface passivation strategies. [14,15] However, bulk states arising from impurities in the process of epitaxial growth commonly exist in the GaN bulk, [16][17][18] and cannot be effectively eliminated. To overcome degraded device performance caused by these impurities, the growing focus has been paid to deep-level traps in the GaN buffer layer.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

Xu,

Guo,

Tao

et al. 2024

Chemistry A European J

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Using computer‐aided design (TCAD) simulation, the impact of the Fe doping profile, including concentration, decay rate, and depth of the doping region on current‐collapse magnitude (∆CC) in 0.5‐μm gated GaN‐based high electron mobility transistors (HEMTs) is systematically investigated. Accurate simulation models are established and developed to facilitate the fabrication of electronics. It is elucidated that the intricate interplay between trapping and de‐trapping of Fe‐related traps at the gate‐drain edge is responsible for current collapse. The concentration and decay rate of the doping region have a more significant impact on current collapse than the depth. Increased trap state density near two‐dimensional electron gas (2DEG) channel caused by deep‐level acceptors would boost ∆CC. However, a minor dynamic reduction in 2DEG density (nT) induces a relatively small ∆CC. By adjusting the concentration, decay rate, and depth of the doping region, ∆CC of GaN‐based Radio Frequency (RF) HEMTs can be reduced by approximately 50.3%.The optimized distribution of Fe doping discussed in this work helps to prepare GaN‐based RF HEMTs with a limited current collapse effect.

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Section: Resultsmentioning

confidence: 99%

Section: Device Structure and Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

Xu,

Guo,

Tao

et al. 2024

Chemistry A European J

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“…The drain current transient (DCT) test involves applying large positive V ds bias, large negative V gs bias, or both to measure the change in I DS [48][49][50][51][52][53][54][55][56]. The transient current I DS can be expressed as…”

Section: Drain Current Transientmentioning

confidence: 99%

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Zou,

Yang,

Qiao

et al. 2023

Micromachines

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Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has been constrained by stability and reliability issues related to traps. In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface traps, whose characteristics and scopes are included as well, are reviewed and highlighted. Finally, the challenges in trap characterization techniques for GaN-based HEMTs are discussed to provide insights into the reliability assessment of GaN-based HEMTs.

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“…RAIN current transient (DCT) [1]- [7] and lowfrequency (LF) output-admittance (Y22) spectroscopy [8]- [13] are the widely used methods to identify the electrically active defects (traps) in the GaN-based highelectron mobility transistors (HEMTs). The DCT and Y22 measurements were conducted at numerous temperatures to construct an Arrhenius plot for a trap, by extracting the emission time constant at each temperature.…”

Section: Introductionmentioning

confidence: 99%

Estimation of Zero-Field Activation Energy for Traps in Fe- and C-Doped GaN-Based HEMTs

Raja,

Painter,

Dupouy

et al. 2024

IEEE Trans. Electron Devices

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Carrier emission rate accelerates from a trap with the increase in drain voltage due to the self-heating (SH) and Poole-Frenkel (PF) emission effects; thus the conventional Arrhenius analysis underestimates the trap activation energy. For this purpose, this work estimates the zero-field (actual) activation energy of a trap in InAlN/GaN and AlN/GaN HEMTs by including SH and PF effects in the emission rate equation. The HEMT thermal resistance (RTH) is computed from the TCAD simulation results. Subsequently, the SH-induced increase in the channel temperature (ΔT) is incorporated in the Arrhenius plot, constructed from drain current transient (DCT) and output-admittance (Y22) parameters. The apparent trap activation energy (Eap) is calculated from the measured DCT and Y22 at different drain voltages, and the respective electric field (F) at each bias condition is extracted from the simulation. Finally, zero-field activation energy (E0) is estimated from the Eap vs. (F) 0.5 plot intercept. E0 for the well-known Fe-related buffer trap is identified at EC -0.7 eV in the InAlN/GaN HEMT. Similarly, E0 at EC -0.51 eV is found for the trap in the C-doped AlN/GaN HEMT.

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Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

Cited by 8 publications

References 45 publications

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Estimation of Zero-Field Activation Energy for Traps in Fe- and C-Doped GaN-Based HEMTs

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