Investigation of electronic and optical properties of InAsSb/GaAs quantum well solar cell (QWSC)

Abstract

This paper provides a detailed theoretical analysis of a newly developed InAsSb/GaAs quantum well solar cell (QWSC). The study investigates how critical parameters, including the number and thickness of InAsxSb1-x quantum well (QW) layers, the GaAs barrier width, and operating temperature, affect the cell's electrical and optical characteristics. The performance metrics analyzed include current-voltage density (J-V), power-voltage (P-V), and external quantum efficiency (EQE). Results indicate that at 250 K, an optimal configuration of 20 quantum wells, each with a thickness of 4 nm, combined with a 60 nm barrier width, enhances the solar cell's performance significantly. This design achieves a 35.34% increase in short-circuit current and an 82.56% improvement in efficiency compared to a standard p-i-n solar cell. Additionally, the structure extends the absorption band for low-energy photons from 880 nm to 1000 nm. These findings underscore the potential of the proposed QWSC design in advancing photovoltaic technologies by improving efficiency and expanding spectral absorption capabilities, making it a promising candidate for next-generation solar cell applications.