Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs

Inaba, Soma; Lu, Weifang; Shima, Ayaka; Ii, Shiori; Takahashi, Mizuki; Yamanaka, Yuki; Hattori, Yuta; Kubota, Kosei; Huang, Kai; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi

doi:10.1039/d3na01101a

Nanoscale Adv.

2024

DOI: 10.1039/d3na01101a

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Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs

Soma Inaba,

Weifang Lu,

Ayaka Shima

et al.

Abstract: Significant attention has been directed toward core–shell GaInN/GaN multiple-quantum shells (MQS) nanowires (NWs) in the context of high-efficiency micro light-emitting diodes (micro-LEDs). These independent three-dimensional NWs offer the advantage of...

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A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

Fan,

Shi,

Chen

et al. 2024

Micromachines

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This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people′s lifestyles. The development process of group-III nitride LEDs is the sum of challenges and solutions constantly encountered with shrinking size. Therefore, this paper uses these challenges and solutions as clues for review. It begins with reviewing the development of group-III nitride materials and substrates. On this basis, some key technological breakthroughs in the development of group-III nitride LEDs are reviewed, mainly including substrate pretreatment and p-type doping in material growth, the proposal of new device structures such as nano-LED and quantum dot (QD) LED, and the improvement in luminous efficiency, from the initial challenge of high-efficiency blue luminescence to current challenge of high-efficiency ultraviolet (UV) and red luminescence. Then, the development of micro-LEDs based on group-III nitride LEDs is reviewed in detail. As a new type of display device, micro-LED has drawn a great deal of attention and has become a research hotspot in the current international display area. Finally, based on micro-LEDs, the development trend of nano-LEDs is proposed, which is greener and energy-saving and is expected to become a new star in the future display field.

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A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

Fan,

Shi,

Chen

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

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Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs

Abstract: Significant attention has been directed toward core–shell GaInN/GaN multiple-quantum shells (MQS) nanowires (NWs) in the context of high-efficiency micro light-emitting diodes (micro-LEDs). These independent three-dimensional NWs offer the advantage of...

Cited by 1 publication

References 46 publications

A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

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