Investigation of energy transfer mechanism in Er3+ and Tm3+ doped AlN crystalline films

Experimental Realization of 1400–2100 nm Broadband Emission for Wide-Bandwidth Optical Communication in Er–Tm Codoped ZnO Films and Devices

“…27 As for Er−Tm codoped semiconductors other than ZnO, also very few results have been reported. 25 1. 25,26 Up to now, no infrared EL results have been reported yet for Er−Tm codoping in ZnO or other semiconductors.…”

“…25 1. 25,26 Up to now, no infrared EL results have been reported yet for Er−Tm codoping in ZnO or other semiconductors.…”

“…Recently, photoluminescence (PL) or electroluminescence (EL) behaviors from Er or Tm unidoped ZnO (EZO or TZO) films have been investigated (Table ). − Generally, there are three processes leading to Er- or Tm-related emission under above-band-gap excitation, which are absorption of excitation energy by the ZnO host, energy transfer (ET) from ZnO to Er 3+ or Tm 3+ ions, and radiative relaxation inside Er 3+ or Tm 3+ ions. For PL under above-band-gap excitation, two different ET processes are proposed, that is, one ET from ZnO to Er 3+ or Tm 3+ is defect-unrelated and another is defect-related. − Jang et al studied the ultraviolet (UV) to infrared PL spectra of EZO and ZnO films under the excitation of 325 nm laser.…”

“…For instance, Chen et al have studied the infrared emission of the ETZO film under direct excitation to Er 3+ and Tm 3+ ions with a 795 nm laser, in which no ET from ZnO to Er 3+ and Tm 3+ ions is involved . As for Er–Tm codoped semiconductors other than ZnO, also very few results have been reported . Wang et al reported the cathodoluminescence (CL) results of Er–Tm codoped AlN films and Roqan et al reported the PL and CL results of Er–Tm codoped GaN films, respectively, but both focused on the visible emissions of Er 3+ and Tm 3+ ions as shown in Table . , Up to now, no infrared EL results have been reported yet for Er–Tm codoping in ZnO or other semiconductors.…”