Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma

Hwang, Wan Sik; Chen, Jinghao; Yoo, Won Jong; Bliznetsov, Vladimir

doi:10.1116/1.1927536

Cited by 56 publications

(14 citation statements)

References 28 publications

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“…These spectra intensity on the as-deposition and BCl 3 /Ar plasma were closely similar due to volatile etching by-product. As the BCl 3 content in the BCl 3 /Ar plasma increases, the intensity of this peak also decreases [10,[13][14][15][16]. Therefore, this conclusion is in good agreement with the data of Fig.…”

Section: (-V) (Nm/min)supporting

confidence: 91%

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Woo¹,

Park²,

Kim

2011

Transactions on Electrical and Electronic Materials

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We investigated the etching characteristics of titanium nitride (TiN) thin film in BCl 3 /Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DCbias voltage = -100 V, substrate temperature = 40℃, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to Al 2 O 3 thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

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Section: (-V) (Nm/min)supporting

confidence: 91%

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Woo¹,

Park²,

Kim

2011

Transactions on Electrical and Electronic Materials

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“…the RF power, DC-bias voltage, process pressure, and substrate temperature, were maintained at 700 W, -250 V, 2 Pa, and 40℃, respectively. As the O 2 content in the CF 4 /Ar gas plasma increased, the etch rates and selectivity of the TaNO thin films increasesd The maximum etch rate of TaNO thin film was 297.1 nm/min at O 2 /CF 4 /Ar (=6:16:4 sccm) [10,11]. This implies that, for a given range of experimental conditions, the chemical reactions were more effective than the physical etch pathway.…”

Section: Effect Of O 2 Content In Cf 4 /Ar Gas Mixing and Rf Powermentioning

confidence: 73%

Chemical Reaction on Etched TaNO Thin Film as O₂ Content Varies in CF₄/Ar Gas Mixing Plasma

Woo¹,

KimChangIl²

2017

Transactions on Electrical and Electronic Materials

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The TaNO thin films were fabricated on standard 8 inch silicon wafers with a resistivity of 15 ~ 25 Ohm·cm. The TaNO thin film produced by the oxidation of deposited TaN films at 400℃ had a Vol. 18, No. 2, pp. 74-77, April 25, 2017 pISSN: 1229-7607 eISSN: 2092 Jong Chang Woo TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS Department of Electronic Automation Engineering, Daeduk University, Daejeon 34111, KoreaChang-Il Kim School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaReceived September 20, 2016; Accepted November 22, 2016In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to SiO 2 in an O 2 /CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O 2 /CF 4 /Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CF 4 -containing plasmas.

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“…The etch selectivity of the TaN thin film to PR varied between 0.01 and 0.5. Tables 1 and 2 show the melting points, the boiling points and the Gibb's free energy potentials, respectively [13,16,17]. This data can be explained by the fact that the main by-product in the etching of the TaN thin film is TaCl 5 [13,16,17].…”

Section: The Effect Of the Gas Mixing Ratiomentioning

confidence: 88%

“…TaN can be used as a good diffusion barrier layer for metal (Cu)/high-k insulator stacks and metal (Cu)/low-k insulator stacks, due to its favorable characteristics, such as its high melting point and hardness, mechanical stability and good conductivity [4][5][6][7][8]. Moreover, for gate stacks with an HfO 2 insulator layer, the properties of the equivalent oxide thickness (EOT) can be improved by using a TaN/HfO 2 stack to replace the poly-Si/SiO 2 stack [1,[9][10][11][12][13]. Besides, TaN materials have been used as the electrodes of MIM (metal-insulatormetal) capacitors [14,15].…”

Section: Introductionmentioning

confidence: 99%

Etching characteristics of TaN thin film using an inductively coupled plasma

Woo

Kim

2010

Surface and Coatings Technology

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Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma

Cited by 56 publications

References 28 publications

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Chemical Reaction on Etched TaNO Thin Film as O₂ Content Varies in CF₄/Ar Gas Mixing Plasma

Etching characteristics of TaN thin film using an inductively coupled plasma

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Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma

Cited by 56 publications

References 28 publications

Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

Chemical Reaction on Etched TaNO Thin Film as O2 Content Varies in CF4/Ar Gas Mixing Plasma

Etching characteristics of TaN thin film using an inductively coupled plasma

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Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Dry Etching Characteristics of TiN Thin Films in BCl₃-Based Plasma

Chemical Reaction on Etched TaNO Thin Film as O₂ Content Varies in CF₄/Ar Gas Mixing Plasma