2023
DOI: 10.1016/j.microrel.2023.114956
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Investigation of failure mechanism of aluminum-scandium wire bond contact under active power cycle test

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Cited by 4 publications
(1 citation statement)
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“…In practical applications, the bonded interface is subjected to large thermal stresses due to the difference between the coefficients of thermal expansion (CTEs) of the Al bonding wires and the Si chip. As the service time increases, cracks develop at the bonded interface and gradually expand, degrading the mechanical properties of the bonded interface [ 3 ]. The degradation of the mechanical properties of the bonded interface seriously affects the conductive and heat transfer characteristics of the IGBT module and ultimately leads to the IGBT module failing.…”
Section: Introductionmentioning
confidence: 99%
“…In practical applications, the bonded interface is subjected to large thermal stresses due to the difference between the coefficients of thermal expansion (CTEs) of the Al bonding wires and the Si chip. As the service time increases, cracks develop at the bonded interface and gradually expand, degrading the mechanical properties of the bonded interface [ 3 ]. The degradation of the mechanical properties of the bonded interface seriously affects the conductive and heat transfer characteristics of the IGBT module and ultimately leads to the IGBT module failing.…”
Section: Introductionmentioning
confidence: 99%