Investigation of false triggering mechanism

Umegami, Hirokatsu; Nishigaki, Akihiro; Hattori, Fumiya; Yamamoto, Masaaki

doi:10.1002/tee.21943

Cited by 10 publications

(4 citation statements)

References 7 publications

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“…Additionally, SiC MOS-FET is skillful at high temperature operation, but it carries a low threshold voltage at high temperature condition [6]- [8]. Therefore, there is a possibility of a false turn-on at the wide band gap semiconductor compared to the silicon devices [9]- [13]. In this way, when false turn-on phenomenon occurs, power efficiency becomes lower therefore it is necessary to research on a false turn-on mechanism.…”

Section: Introductionmentioning

confidence: 94%

An analysis of false turn-on mechanism on power devices

Nishigaki

Umegami

Hattori

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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Currently, driving power circuits at high switching frequency is performed in order to downsize and lighten switching power supplies. Along with it, wide band gap semiconductor devices, GaN and SiC, have attracted attention. However, there is a great constrain related to the false turn-on phenomenon produced by gate noise because these wide band gap semiconductor devices have low threshold voltage. If the false turn-on phenomenon occurs, the efficiency of the power supply decreases. Therefore, this paper analyzes the gate noise performance using simulation and experimental tests focusing on the parasitic inductance of the power devices terminals. As a result, it was found that the gate noises can be related to the recovery current of the body diodes. Additionally, this analysis was theorized by the comparison between the experimental results and the theoretical equation using an equivalent circuit.

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Section: Introductionmentioning

confidence: 94%

An analysis of false turn-on mechanism on power devices

Nishigaki

Umegami

Hattori

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

Self Cite

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“…When the V GS drops down the threshold voltage V th , it rings back and surpasses the threshold voltage V th . This phenomenon is well known as false turn-on [11], [20], [21]. As shown in Fig.…”

Section: Vdcmentioning

confidence: 99%

Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

Xue

Iannuzzo

2022

IEEE Trans. Power Electron.

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This paper presents a comprehensive study on the occurrence mechanism, instability analysis and suppression methods of self-sustained turn-off oscillation which occurs on cascode gallium nitride high electron mobility transistors (cascode GaN HEMTs). In the beginning, the oscillation waveforms are analyzed, which indicate that the occurrence of the oscillation is determined by test circuit instability. Based on the double pulse test, the impact of the load current IL, DC-bus voltage VDC and gate resistance RG on the self-sustained oscillation is identified. To investigate the instability of the resonant circuit, a smallsignal ac model of the resonant circuit is derived. Based on the model, the influences of various parameters on the self-sustained oscillation are analyzed. The analyses reveal the possible methods which can suppress the oscillation. The effectiveness of the proposed methods is validated by the experimental data and simulation results in the end.

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“…However, SiC MOSFETs are prone to oscillations during switching because of the coupling effects between the variation of drain current (d I D /d t ) and the parasitic inductances from the package design of the power module, which results in voltage overshoot [5, 6], false turn‐on and unreliability [7, 8], and even damage to the devices [9]. With the development of the packaging technology, parasitic inductances are becoming increasingly small, but it cannot be avoided.…”

Section: Introductionmentioning

confidence: 99%

Analysis of SiC MOSFET d I /d t and its temperature dependence

Liao

et al. 2018

IET Power Electronics

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A change regulation of variation in drain current (dI D /dt) of silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs) and their temperature dependencies are examined. Experimental results show that the magnitude of turn-off dI D /dt decreases with temperature and turn-on dI D /dt increases with increasing temperature. Further analysis shows that turn-on dI D /dt is better than turn-off dI D /dt in terms of temperature dependency and exhibits good linearity. This behaviour results from the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in the SiC MOSFET. Other factors that affect the temperature dependency of dI D /dt, such as supply voltage, load current, and gate resistance, are also discussed. A temperature-based analytical model of dI D /dt for the SiC MOSFET is derived using fundamental device physics equations. The calculations generally fit the measurements well. These results are beneficial since they provide a potential approach for junction temperature estimation in the SiC MOSFET. In SiC MOSFET-based practical applications, if turn-on dI D /dt is sensed, then the junction temperature can be derived from the relationship curve of turn-on dI D /dt versus temperature drawn experimentally in advance. 2 Temperature dependency characterisation of variation in drain current 2.1 Overview of the turn-on and turn-off process The typical structure of a 1200 V SiC MOSFET that consists of electrodes, gate oxide, junction field-effect transistor (JFET)

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Investigation of false triggering mechanism

Cited by 10 publications

References 7 publications

An analysis of false turn-on mechanism on power devices

An analysis of false turn-on mechanism on power devices

Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

Analysis of SiC MOSFET d I /d t and its temperature dependence

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