Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si

Panciera, Federico; Hoummada, K.; Mastromatteo, Massimo; Salvador, D. De; Napolitani, E.; Boninelli, Simona; Impellizzeri, G.; Priolo, F.; Carnera, A.; Mangelinck, Dominique

doi:10.1063/1.4751254

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Nondoping Impurities1

B Source Of Dopant Atoms1

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Cited by 6 publications

(2 citation statements)

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“…As can be seen in Figure 7.27, the segregation of F at the c-a interface is quite significant [208][209][210][211][212][213][214]. It has been shown that transient enhanced diffusion can be reduced by inhibiting the release of interstitials from EOR defects.…”

Section: Nondoping Impuritiesmentioning

confidence: 94%

Solid-Phase Epitaxy

Johnson

McCallum

Aziz³

2015

Handbook of Crystal Growth

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Section: Nondoping Impuritiesmentioning

confidence: 94%

Solid-Phase Epitaxy

Johnson

McCallum

Aziz³

2015

Handbook of Crystal Growth

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“…27 As a result, both S and F are incorporated, and we observe a F concentration about twice that of S. The structural and electronic properties of F dopant in Si are not well known, although some reports suggest F atoms form small SiF 4 clusters inside crystalline Si. 29,30 …”

Section: B Source Of Dopant Atomsmentioning

confidence: 98%

Femtosecond-laser hyperdoping silicon in an SF₆ atmosphere: Dopant incorporation mechanism

Sher

Mangan

Smith

et al. 2015

Journal of Applied Physics

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In this paper, we examine the fundamental processes that occur during femtosecond-laser hyperdoping of silicon with a gas-phase dopant precursor. We probe the dopant concentration profile as a function of the number of laser pulses and pressure of the dopant precursor (sulfur hexafluoride). In contrast to previous studies, we show the hyperdoped layer is single crystalline. From the dose dependence on pressure, we conclude that surface adsorbed molecules are the dominant source of the dopant atoms. Using numerical simulation, we estimate the change in flux with increasing number of laser pulses to fit the concentration profiles. We hypothesize that the native oxide plays an important role in setting the surface boundary condition. As a result of the removal of the native oxide by successive laser pulses, dopant incorporation is more efficient during the later stage of laser irradiation. V C 2015 AIP Publishing LLC. [http://dx.

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Defect engineering strategies for germanium

Chroneos

2013

J Mater Sci: Mater Electron

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Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si

Cited by 6 publications

References 25 publications

Solid-Phase Epitaxy

Solid-Phase Epitaxy

Femtosecond-laser hyperdoping silicon in an SF₆ atmosphere: Dopant incorporation mechanism

Defect engineering strategies for germanium

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Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si

Cited by 6 publications

References 25 publications

Solid-Phase Epitaxy

Solid-Phase Epitaxy

Femtosecond-laser hyperdoping silicon in an SF6 atmosphere: Dopant incorporation mechanism

Defect engineering strategies for germanium

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Femtosecond-laser hyperdoping silicon in an SF₆ atmosphere: Dopant incorporation mechanism