Investigation of flux dependent sensitivity on single event effect in memory devices

Abstract

Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer (LET) of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.

Impact of High Particle Flux in Radiation Ground Tests with Protons

“…The same increase was for various HI energies (13MeV to 99MeV). The same authors, in [14], extend this work with GEANT4 and TCAD simulations and they discuss the physical aspects of the phenomena.…”

Simulation research on single event effect of N-well resistor

“…现有针对集成电阻的研究多集 中于器件本身的电学特性和电路应用, 而忽视了对 器件辐照效应的关注. 如1997年, Booth和McAndrew [11] 研究了三端扩散电阻的电阻值; 2006年, Singh和Roy [12] 计算了N阱电阻的电阻值; 2007年, 李月影等 [13] 通过建立SPICE模型研究了高压阱 电 阻 的 欧 姆 特 性 ; 2009年 , 石 晓 峰 等 [14] 研 究 了 N阱扩散电阻在电应力下产生的潜在损伤; 2010年, Srinivasan等 [15] 研究了N阱电阻中的低频噪声特 性; 甚至在2018年, 罗捷等 [16] 中提出一种利用电阻 作为静态随机存储器(static random access memory, SRAM)辐射加固的应用方法. 但是针对N阱 3.000T10 16 7.038T10 14 1.649T10 13 -2.582T10 11 -2.751T10 13 -1.173T10 15 -5.000T10 16 Doping concentration/cm -3 3.000T10 16 7.038T10 14 1.649T10 13 -2.582T10 11 -2.751T10 13 -1.…”