Investigation of Ga₂O₃/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

Abstract

In this paper, a Ga2O3/diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga2O3/diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data of the literature. Since both Ga2O3 and diamond are ultra-wide bandgap semiconductor materials, the Ga2O3/diamond SAM-APD shows good solar-blind detection ability, and the corresponding cut off wavelength is about 263nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, the simulation results show that the gain of the designed device can reach 5×104 and the peak responsivity can reach a value as high as 78 A/W.

Illumination-Dependent I-V Characteristics of MgF2/Al Multilayered Photodetector

“…[18][19][20] Recently, there has been an increasing interest in exploring novel heterostructure designs to enhance the functionality and efficiency of photodiodes. [21][22][23] Among these materials, aluminum plays a pivotal role as a single photodetection element, providing efficient and reliable light detection capabilities [24][25][26][27] One of the key advantages of aluminum-based photodetectors is their high sensitivity. 28,29 They can detect even low levels of light, making them ideal for low-light imaging applications.…”