Investigation of Ga8Sb34Se58 Material for Low-Power Phase Change Memory

Abstract

With crystallization temperature of about 242 • C and activation energy of crystallization of around 3.66 eV, Ga 8 Sb 34 Se 58 material is demonstrated to be a great potential for ultralong retention phase change memory (PCM). The rhombohedral Sb and orthorhombic Sb 2 Se 3 nanometer-size phases are evenly embedded into the crystalline Ga 8 Sb 34 Se 58 material. The density change upon amorphousto-crystalline transition is about 4.8% which is smaller than that of Ge 2 Sb 2 Te 5 . The reversible phase transition can be realized by both picosecond laser and nanosecond electrical pulses. Ga 8 Sb 34 Se 58 -based PCM cell requires a low power as a result of its low melting point (about 488 • C) and low thermal conductivity (about 0.34 W/m · K).) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 72.205.199.34 Downloaded on 2015-03-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 72.205.199.34 Downloaded on 2015-03-08 to IP

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