Investigation of GaAs MOSFETs with Gate Oxide Grown Using Photoelectrochemical Oxidation Method

Abstract

In this work, photoelectrochemical oxidation method was used to directly grown gate oxide of GaAs metal-oxide-semiconductor field effect transistor. The I DS-V DS and g m-V GS characteristics of the GaAs MOSFETs were measured. For biasing at V DS =2.4V and V GS =0V, an output current density of 101mA/mm was obtained. The associated extrinsic transconductance of the GaAs MOS-FETs was 65mS/mm.