2020
DOI: 10.1016/j.optmat.2020.109716
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Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

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“…By using the calculated lattice parameters, the tetragonal strain of the lattice of Ga(As,Bi) layers can be reconstructed. In addition to HR-XRD, the EDS method was used to control the Bi concentration in the GaAs(1-x)Bix layers, which is described in more detail in reference [27].…”
Section: Ii-experimental Detailsmentioning
confidence: 99%
“…By using the calculated lattice parameters, the tetragonal strain of the lattice of Ga(As,Bi) layers can be reconstructed. In addition to HR-XRD, the EDS method was used to control the Bi concentration in the GaAs(1-x)Bix layers, which is described in more detail in reference [27].…”
Section: Ii-experimental Detailsmentioning
confidence: 99%