Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements

Kaymaz, Ahmet; Tecimer, Habibe Uslu; Baydilli, Esra Evcin; Altındal, Ş.

doi:10.1007/s10854-020-03370-2

Cited by 18 publications

(2 citation statements)

References 62 publications

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“…These results show that the surface states in the inversion region are more effective than that in the accumulation region. Similar two peaks' behaviors in the C-V curve under radiation are also observed in the literature [30,31].…”

Section: Resultssupporting

confidence: 88%

Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

Arslan

Badalı

Altındal

et al. 2020

J Mater Sci: Mater Electron

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The current-voltage (I-V) and capacitance-voltage (C-V) behaviors of the (Au/Ni)/HfAlO 3 /n-Si (MIS) junctions at room temperature under white light with various intensities were investigated. The ln(I)-V curves show two linear behavior regions at about 1 V before and after the point of intersection that can be defined as two separate current-conduction (CMs) Mechanisms. The values of the ideality factor (n) and the zero-bias barrier height (Φ B0 ) were extracted using the slope and intercept of the ln(I)-V curve before and after the intersection point based on lighting power. Although the Φ B0 values decrease with increasing light power, n increases for two regions, and there is a strong linear relationship between them. The values of photo-current (I ph ) increase with the increasing lighting power due to the formation of electron-hole pairs. The slope of the double-logarithmic I ph -P was changed from 0.422 to 0.852, respectively, at − 2 V and − 9 V, which indicates the ongoing distribution of N ss . In addition, the profile of surface states (N ss ) ionized by light was obtained from the capacitance measured in dark and under lighting at 1 MHz. The N ss -V curve has two characteristic peaks that correspond to the region of depletion and accumulation due to a special distribution of N ss and their restructuring and reordering under the effects of lighting and an electric field.

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Section: Resultssupporting

confidence: 88%

Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

Arslan

Badalı

Altındal

et al. 2020

J Mater Sci: Mater Electron

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“…If the thickness of the oxide/insulator interlayer is greater than 500 Å, such a structure is defined as a capacitor rather than a diode. It is well-known that these devices cannot provide carrier conduction at the M/S interface and, therefore, can store electrical charges and energy [15], [16]. In this study, the thickness of the natural oxide layer for the Au/n-GaAs/Au-Ge type Schottky device was obtained as approximately 23.4 Å using Nicollian and Goetzberger calculation method [17].…”

Section: Introductionmentioning

confidence: 97%

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Kaymaz

2023

Balkan Journal of Electrical and Computer Engineering

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This study focuses on the abnormal peaks observed in voltage-dependent capacitance graphs and negative capacitance behaviors of the GaAs-based MOS devices for the unirradiated sample and after exposing the device to 5 and 10 kGy ionizing (gamma) radiation doses. Experimental results showed that the amplitude of the abnormal peaks, observed at about 1.75 V, increases with the irradiation dose. The peak point was also shifted toward the positive biases after irradiation. Furthermore, the conductance values increased rapidly and reached their maximum level, while the capacitance values reached their minimum level in the high voltage biases. This situation is directly related to the inductive behavior of the MOS devices. However, it has been determined that the MOS device's inductive behavior is more effective after irradiation. These behaviors can be observed because of the ionization process, the MOS device's series resistance, surface states, and due to some displacement damages caused by ionizing radiation. Therefore, the series resistance and the radiation-induced surface states were obtained to clarify the impact of radiation on the device. It was seen that the radiation-induced surface states changed around 3x1012 for the maximum cumulative dose (10 kGy), and the series resistance values changed less than 2 Ω (it was obtained 8.74 Ω for 0 kGy and 6.82 Ω for 10 kGy). As a result, the degradation in the GaAs-based MOS device was determined to be insignificant for 10 kGy doses. Therefore, this MOS device can be safely used as an electronic component in radiation environments such as nuclear plants and satellite systems.

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Metal Oxide Semiconductors for Diodes

2023

Metal Oxide Semiconductors

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Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements

Cited by 18 publications

References 62 publications

Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Metal Oxide Semiconductors for Diodes

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