Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Zhang, Yachao; Su, Kai; Guo, Rui; Xu, Shengrui; Chen, Dazheng; Zhu, Jiaduo; Bao, Weimin; Zhang, Jincheng; Ning, Jing; Hao, Yue

doi:10.1002/pssr.201900167

Cited by 7 publications

(6 citation statements)

References 30 publications

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“…27,28 Zhang et al reported that S-AlN can be great for highquality GaN film growth on graphene. 29 law of interaction between the buffer and epitaxial layers on graphene has not been theoretically revealed. Also, no devices were made to verify the performance of the GaN film.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Zhou et al used magnetron S-AlN as the nucleation layer to decrease the dislocation density of GaN, and InGaN/AlGaN UV LEDs were prepared on this template. , Over recent years, two-dimensional (2D) materials, such as graphene, the monolayer thickness of which is about 0.34 nm, have been incorporated as buffer layers for the epitaxial growth of III-N films. − Graphene can be used to overcome the thermal expansion coefficient and lattice mismatch between the epitaxial layer and substrate. , Moreover, weak van der Waals forces between graphene and III-N epitaxial layers facilitate the transfer of III-N films, which has received considerable research interest. , Therefore, graphene has great potential to improve the reliability of GaN-based optoelectronic and high-power devices. However, the epitaxial growth of large-area GaN films on graphene is hard because the adsorption energy of gallium atoms on graphene is very low. , Zhang et al reported that S-AlN can be great for high-quality GaN film growth on graphene . However, the general law of interaction between the buffer and epitaxial layers on graphene has not been theoretically revealed.…”

Section: Introductionmentioning

confidence: 99%

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GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

Ning

Yan

Jia

et al. 2020

ACS Appl. Nano Mater.

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GaN-based light-emitting diodes (LEDs) are extremely promising and highly efficient solid-state light sources with long lifetimes. In this study, a stress-free GaN film with optimal quality and a low density of dislocations was obtained on sapphire by embedding a sputtered AlN (S-AlN)/graphene composite buffer layer. The growth of a nucleation-enhanced dislocation–annihilation structure via S-AlN/graphene-assisted quasi-van der Waals epitaxy was proposed here. Sapphire was first sputter-coated with AlN. After transfer of a monolayer graphene onto the 25 nm S-AlN surface, a 1.9 μm GaN thin film was grown by metal–organic chemical vapor deposition. Theoretical first-principles density functional theory calculations were performed to determine the electrostatic potential on the surface of the composite substrate. We also fabricated an UV LED that delivered a stable performance using a high-quality GaN film. Finally, the present work may provide insight into the epitaxial growth of III-N films and demonstrates that fabricating stress-free, high-quality, and transferable III-N films for solid-state lighting is achievable.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

Ning

Yan

Jia

et al. 2020

ACS Appl. Nano Mater.

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“…Aluminum Nitride (AlN) is a material with a wurtzite structure and a lattice mismatch of ~ 2.4% with GaN. The polarity of AlN substrates is rather advantageous for improving the crystal quality of GaN growth, and is another good candidate for remote epitaxy [ 40 , 200 – 205 ]. Zhang et al succeeded in high-quality GaN growth, including low-threading dislocation through the modulation of graphene surface states by transferring graphene on sputtered AlN templates [ 200 ].…”

Section: Interaction Between Growth Technique 2d Material and Substra...mentioning

confidence: 99%

“…The polarity of AlN substrates is rather advantageous for improving the crystal quality of GaN growth, and is another good candidate for remote epitaxy [ 40 , 200 – 205 ]. Zhang et al succeeded in high-quality GaN growth, including low-threading dislocation through the modulation of graphene surface states by transferring graphene on sputtered AlN templates [ 200 ]. More recently, Liu et al compared growth on a non-epitaxial substrate along with an AlN-deposited (via PVD) substrate and realized polarization-driven selective growth (OSG) through the growth pattern of AlN nuclei after graphene transfer [ 204 ].…”

Section: Interaction Between Growth Technique 2d Material and Substra...mentioning

confidence: 99%

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Kwak

et al. 2023

Nano Convergence

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Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date. Graphical Abstract

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“…All the positions prove that the thickness uniformity of the AlN is very good and meets the expected set values. Based on previous studies, we added a traditional AlN/GaN structure for comparison. According to the previous calculations, most of the AlN nucleation sites are concentrated in the hollow of the complete graphene CC ring, and a few nucleation sites are in the center of the broken graphene CC ring.…”

Section: Resultsmentioning

confidence: 99%

Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes

Jia

Ning

Zhang

et al. 2019

Advanced Optical Materials

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some outstanding features, such as a high carrier mobility, [8][9][10] a high thermal conductivity, [11] flexibility, [12] and visible transparency. [13,14] Moreover, it can be used as a removable layer for the epitaxial growth of III-Ns, thus providing the foundation for a new field of transferable and flexible LEDs. [15,16] Recently, graphene has been used as a buffer layer for the van der Waals epitaxy growth of a GaN epilayer to overcome the substantial thermal expansion coefficient and in-plane lattice constant mismatch between the GaN epilayer and sapphire substrate (c-Al 2 O 3 ), which causes a significant strain in the GaN epilayer. However, because the graphene surface lacks dangling bonds, the nucleation of nitrides on graphene is restricted, and clusters are easily formed. [17,18] In this study, theoretical calculations using first-principles calculations based on density functional theory (DFT) were carefully conducted to further examine the formation mechanism of AlN and GaN on graphene. We found that AlN selectively grows on graphene, and we identified its optimal nucleation site. We obtained the adsorption probability of Al atoms at various positions on the graphene CC ring and found that the hollow of the complete graphene CC ring and the center of the broken graphene CC ring are the best adsorption positions under different states of the graphene. Based on this, we innovatively inserted an AlN composite nucleation layer between graphene and GaN, which was grown by metal organic chemical vapor deposition (MOCVD) using time-distributed and constant-pressure (TDCP) growth. The growth process for AlN is divided into three stages. Under the same pressure, different flow rates, and growth temperatures are used for each stage. By controlling the growth time at different flow rates, an AlN composite nucleation layer on graphene can be formed. By introducing the selective nucleation of an AlN composite layer and graphene, the biaxial stress of the GaN film was effectively released, leading to transferable and low density dislocations in the GaN film and the In 0.1 Ga 0.9 N/GaN multiple quantum well structures. Note that LEDs with an ultrahigh light output power (LOP) of 260.5 mW at a small current of 560 mA were achieved. Our study demonstrates a practical application of an AlN composite nucleation layer grown on graphene that may result in A transferable GaN epilayer is grown on an improved aluminum nitride (AlN)/graphene composite substrate. In this study, theoretical calculations using first-principles calculations based on density functional theory are carefully conducted to further examine the formation mechanism of AlN on graphene. AlN selectively grows on graphene via its optimal nucleation site, which leads to the selective nucleation of AlN on graphene via quasi-van der Waals epitaxy. Thus, an AlN composite nucleation layer is innovatively inserted between graphene and GaN, using the time-distributed and constant-pressure growth method by metal organic chemical vapor deposition. Moreover, a hi...

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Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Cited by 7 publications

References 30 publications

GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes

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