Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy

Pfennighaus, K.; Fissel, A.; Kaiser, Ute; Wendt, Michael; Kräuβlich, J.; Peiter, G.; Schröter, Bernd; Richter, Wolfgang

doi:10.1016/s0921-5107(96)01971-x

Cited by 5 publications

(4 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TO and LO absorption peaks for 3C-SiC are consistent with literature data for the IR-active modes at the Γ point: 796.2(3) cm −1 for the TO mode and 972.2(3) cm −1 for the LO mode [41]. Similar values were found by FTIR spectr oscopy for very thin crystalline SiC films (<100 nm) on a Si substrate: ~800 cm −1 for the TO mode (at θ = 0°) [42] and 965 cm −1 for the LO mode (at θ = 50°) [43], but with smaller FWHMs (35-45 cm −1 ).…”

Section: Discussionsupporting

confidence: 79%

“…Ref. [43] Fitting parameters of the TO and LO peaks in the FTIR spectra of un-irradiated silicon nitride films with different thicknesses (t): centroid (ν 0 ), full-width at half maximum (W = 2.35σ 0 , where σ 0 is the standard deviation), asymmetry factor (α), amplitude (A) and integrated intensity (A × W) of the Gaussian profiles, for different incidence angles (θ). Literature data deduced from FTIR spectra of a-SiN x films [38] are also displayed.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

FTIR study of silicon carbide amorphization by heavy ion irradiations

Costantini

Miro

Pluchery

2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C–SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C–SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

show abstract

Section: Discussionsupporting

confidence: 79%

Section: Discussionmentioning

confidence: 99%

FTIR study of silicon carbide amorphization by heavy ion irradiations

Costantini

Miro

Pluchery

2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The substrate temperature was increased at the beginning of the growth process up to 1050°C and was stable during the entire deposition time. The SiC film thickness was about 150 nm (for more details see [6,7]).…”

Section: Methodsmentioning

confidence: 99%

“…Already in 1983 Nishino et al [1] reported about the large area growth of 3C-SiC on silicon by chemical vapour deposition (CVD). There is a trend nowadays to the use the molecular-beam-epitaxy (MBE) [2][3][4][5][6][7] over the CVD [1,8,9] for SiC deposition. Compared to the CVD, the MBE method has the potential to produce SiC layers at lower temperature and with higher purity [5].…”

Section: Introductionmentioning

confidence: 99%

Different void shapes in Si at the SiC thin film/Si(111) substrate interface

Jinschek¹,

Kaiser²,

Richter³

2001

Journal of Electron Microscopy

View full text Add to dashboard Cite

The shape of interfacial voids formed in the epitaxial SiC/Si(111) heterosystem just underneath the SiC film has been investigated using optical microscopy and transmission electron microscopy (TEM). SiC films are grown on Si(111) substrates at two different substrate temperatures (specimen type 1 at 850°C, specimen type 2 at 1050°C) using solidsource molecular-beam epitaxy (MBE). At 850°C substrate temperature the well-known triangular void shape with primary {111} facets is formed in the Si substrate confirming the results already reported by Learn and Khan in 1970. When growing at 1050°C substrate temperature a new void shape showing a hexagonal appearance in the plan-view direction is found. By indexing the hexagonal void planes, other facets with higher surface energies than the usual {111} type facets have been observed leading to a void shape near the equilibrium void shape in a cubic crystal. As in the case of the triangular shaped voids, the formation process of the hexagonal shaped voids should start from the {111} planes, however, due to the higher substrate temperature, planes with higher surface energies are formed in addition.

show abstract