Investigation of growth processes of ingots of silicon carbide single crystals

Tairov, Yu. M.; Tsvetkov, V. F.

doi:10.1016/0022-0248(78)90169-0

Cited by 550 publications

(249 citation statements)

References 4 publications

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“…The high-temperature (2700 • C) seedless crystal growth is driven by the temperature gradients within the crucible, resulting in a pressure gradient and thus, in a mass transport. The process is followed by the subsequent fast cooling, which "freezes" the defects within the lattice at low densities (for details see [15]). Taking into account the retrograde character of the nitrogen solubility with temperature, the doping level of the 6H-SiC crystals is below 10 17 cm −3 and the compensation degree of nitrogen donors is ca.…”

mentioning

confidence: 99%

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Riedel¹,

Fuchs²,

Kraus³

et al. 2012

Phys. Rev. Lett.

174

154

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Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.PACS numbers: 61.72. Hh, 76.70.Hb, 61.72.jd The double radio-optical resonance in atoms [1] constitutes the basis for a unprecedented level of coherent quantum control. Atomic time standards [2] and multiqubit quantum logic gates [3] are among the most known examples. In the solid state, semiconductor quantum dots (QDs) and the nitrogen-vacancy (NV) defects in diamond, frequently referred to as artificial atoms, are considered as the most promising candidates for quantum information processing [4,5]. Nevertheless, such a high degree of quantum control, as achieved in atoms,has not yet been demonstrated in these systems so far. Therefore, there is a search for quantum systems with even more potential [6].Recently, intrinsic defects in silicon carbide (SiC) have been proposed as eligible candidates for qubits [7,8]. Indeed, they reveal quantum spin coherence even at room temperature [9][10][11]. All of these experiments have been carried out under non-resonant optical excitation where all spins are controlled simultaneously. However, for spinbased information processing it is necessary to perform manipulations of selected spins, while the rest should remain unaffected. This demonstration in SiC is still an outstanding task.The selective spin control can be realized using a resonant optical excitation. As a rule, inhomogeneous broadening is much larger than the natural spectral linewidth, and such resonant addressing can be done on single centers only. To avoid this problem, we applied a special procedure to "freeze" silicon vacancy (V Si ) defects during their growth, allowing to preserve a high homogeneity inherent to Lely crystals. This is confirmed by the extremely sharp optical resonances in our samples. The spectral width of the V Si absorption lines is several µeV (ca. 1 GHz), which comparable with that of a single QD or a single NV center in diamond.We then demonstrate the selective spin initialization and readout by tuning the laser wavelength together with the spin manipulation by means of electron spin resonance (ESR). Such a double radio-optical resonance control indicates that the V Si defects strongly interact with light and are well decoupled from lattice vibr...

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confidence: 99%

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Riedel¹,

Fuchs²,

Kraus³

et al. 2012

Phys. Rev. Lett.

174

154

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“…carbon-based electron ic components, including the methods of growing 3D silicon carbide mono-crystals (the LETI method) [1], epitaxial diamond structures with unprecedented electrophysical parameters [2], 3D nanoscale topologically-ordered silicon carbide -nanostructured diamond compositions used in auto-emission electronics [3,4], 2D nanolayer compositions of rigid-chain polyimides used for interlayer insu lat ion w ith nano-porous low-k dielectrics in the state-ofthe-art integrated microcircuits having nanosca le topolog ica l parameters [5,6].…”

Section: #3 / 65 / 2016mentioning

confidence: 99%

“…Особо следует отметить достижения ряда научно-образовательных коллек-тивов, функционирующих на базе вуза, по крити-ческим направлениям развития углеродных мате-риалов и ЭКБ на их основе, включая технологии роста объемных монокристаллов карбида кремния (метод ЛЭТИ) [1], эпитаксиальных структур алмаза с ранее недостижимыми электрофизическими пара-метрами [2], 3D наноразмерных топологически упо-рядоченных композиций "карбид кремния -нано-структурированный алмаз" для автоэмиссионной электроники [3,4], нанослоевых 2D-композиций жесткоцепных полиимидов для межслойной изо-ляции нанопористыми low-k-диэлектриками в новейших интегральных микросхемах с нанораз-мерными топологическими нормами [5,6].…”

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Russian electronic components for extreme conditions: silicon carbide industry founded by LETI

Luchinin¹

2016

NanoRus

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“…Synthetic SiC wafers were grown at Linkoping University using the sublimation method [16] at a temperature of circa 2400 °C; temperature gradients over the 2 in wafer diameter did not exceeded 10-20°. During the growth process some instabilities have occurred, leading to the development of macroscopic (few mm 2 ) domains of different polytype compositions and/or different concentrations of charge carriers.…”

Section: Samplesmentioning

confidence: 99%

Isotopic heterogeneity in synthetic and natural silicon carbide

Shiryaev

Wiedenbeck

Reutsky

et al. 2008

Journal of Physics and Chemistry of Solids

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The distribution of both carbon and silicon isotopes in synthetic sublimation growth SiC wafers and in natural SiC grains was studied using secondary ion mass-spectrometry (SIMS).Significant variations in both isotopic ratios were observed which were broadly correlated with the crystalline perfection as documented by Raman microspectroscopy. Domains consisting of 15R (or with its admixture) are, on average, enriched in 12 C isotope relative to 6H domains, and they also show larger scatter in their observed silicon isotope ratios. We ascribe such heterogeneity to fluctuations of Si/C ratio in the growth medium and it is possible to model the spatial extent of such fluctuations. For the natural SiC grains the isotopic data suggest that they grew under relatively stable conditions, although some of them show significant isotopic zoning.

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Investigation of growth processes of ingots of silicon carbide single crystals

Cited by 550 publications

References 4 publications

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide

Russian electronic components for extreme conditions: silicon carbide industry founded by LETI

Isotopic heterogeneity in synthetic and natural silicon carbide

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