2024
DOI: 10.1021/acsaem.4c01079
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Investigation of H2 Plasma Incorporated ALD-TiOx Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Chien-Hsuan Chen,
S. Novia Berriel,
Taylor M. Currie
et al.

Abstract: In this work, we present an integrated method for the deposition of TiO x through introducing H 2 plasma pulses into the atomic layer deposition process. The potential of TiO x films deposited through this process as a hole-selective passivating contact in crystalline silicon solar cells was evaluated in terms of passivation quality, carrier selectivity, electrical properties, and optical performance. The combination of the growth process with post-H 2 plasma treatment yields TiO x films with superior passivat… Show more

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