Investigation of heavy ion radiation and temperature on junctionless tunnel field effect transistor

Aishwarya, K.; Lakshmi, B.

doi:10.1007/s11051-023-05793-4

Cited by 3 publications

(4 citation statements)

References 46 publications

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“…As stated in our previous work 41 , the device will be radiation insensitive if I peak is lesser than I ON which can be found in Eq. ( 9 ).…”

Section: Device Description and Simulation Methodologymentioning

confidence: 78%

“…For a fair comparison, this study is carried out by matching I ON for all the devices. The LET considered for the study 24 , 41 is 1.24 MeV/mg/cm 2 and 150 MeV/mg/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

“…The important metrics, collected charge, deposited charge and bipolar gain are studied for radiation analysis which is similar to our previous work 41 . The drain current is integrated over time to produce Q C , and this may be done by using the following Eq.…”

Section: Device Description and Simulation Methodologymentioning

confidence: 94%

“…The fabrication of JLTFET is simple as there is no metallurgical junction 39 , 40 . In our previous work, homojunction based JLTFET is investigated under heavy ion radiation 41 . The DC and analog characteristics of JLTFET are improved by using III–V materials which could be used as hetero JLTFET (HJLTFET) 42 – 44 .…”

Section: Introductionmentioning

confidence: 99%

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TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

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Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

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“…As stated in our previous work 41 , the device will be radiation insensitive if I peak is lesser than I ON which can be found in Eq. ( 9 ).…”

Section: Device Description and Simulation Methodologymentioning

confidence: 78%

“…For a fair comparison, this study is carried out by matching I ON for all the devices. The LET considered for the study 24 , 41 is 1.24 MeV/mg/cm 2 and 150 MeV/mg/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

Section: Device Description and Simulation Methodologymentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

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TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Aishwarya,

Lakshmi

2024

Sci Rep

Self Cite

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Single event upset and mitigation technique in JLTFET based RF mixer

2025

Results in Engineering

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Study on Single Event Upset and Mitigation Technique in JLTFET‐Based 6T SRAM Cell

2024

Journal of Electrical and Computer Engineering

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The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon‐based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. JLTFET‐based SRAM circuit is designed using the look up table‐based Verilog A code obtained from TCAD values of the device. After verifying SRAM circuit for its functionality, the stability parameters, read static noise margin (RSNM), write static noise margin (WSNM), read/write delay, and power consumption are evaluated. It is observed that the circuit has a good stability of noise margin and lesser delay. The radiation study is carried out using a transient current source striking at one of the output nodes. This causes single event upset (SEU) which changes the data stored in the memory cell giving rise to soft error (SER). SER is recovered by the radiation hardening by design (RHBD) technique with an additional RC network between two cross coupled inverters. The performance metrics, read/write delay, and the power consumption before, during, and after the radiation strike are analyzed. It is observed that SER gets totally eliminated with less recovery time at the expense of a slight increase in power and delay.

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Investigation of heavy ion radiation and temperature on junctionless tunnel field effect transistor

Cited by 3 publications

References 46 publications

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Single event upset and mitigation technique in JLTFET based RF mixer

Study on Single Event Upset and Mitigation Technique in JLTFET‐Based 6T SRAM Cell

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