Investigation of High-Sensitivity Piezoresistive Pressure Sensors at Ultra-Low Differential Pressures

Basov, Mikhail; Prigodskiy, Denis

doi:10.1109/jsen.2020.2980326

Cited by 46 publications

(21 citation statements)

References 40 publications

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“…Recently there were several publications on design and modeling of low pressure piezoresistive sensors [8][9][10][11][12][13][14][15][16][17][18]. These publications are mostly focused on achieving higher pressure sensitivity and improving sensor performance by optimization of mechanical structure of pressure sensor chips.…”

Section: Introductionmentioning

confidence: 99%

Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa

Basov

2021

IEEE Sensors J.

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The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a nondeformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature dependence of zero output signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

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Section: Introductionmentioning

confidence: 99%

Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa

Basov

2021

IEEE Sensors J.

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“…Additionally, such structures with thinned membrane part are more susceptible to cracking or fracture during fabrication. Many developments consider the possibility of MS increase in piezoresistor (PR) areas by combinations of mechanical concentrator in the form of rigid islands (RIs) or complex shaped mechanical structures [13][14][15][16][17][18][19][20]. Such mechanical structures are created by using deep reactive ion etching (DRIE) of both back and top side of the chip.…”

Section: Introductionmentioning

confidence: 99%

High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa

Basov¹

2021

Phys. Scr.

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Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0x4.0 mm 2 chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2KNLback = 0.11 ± 0.09 %/FS (pressure is applied from the back chip side) and 2KNLtop = 0.18 ± 0.09 %/FS (pressure is applied from the top chip side). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.

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“…The creation of temperature sensor as separate chip allows elements to be independent from each other regarding the choice of initial semiconductor material, combination of technological processes and, most importantly, methods of pressure and temperature measurement. Pressure sensor can operate on the piezoresistive effect, using single sensitive element [39], classical Wheatstone bridge electrical circuit [40][41][42][43][44][45] or new development utilizing piezosensitive differential amplifier with negative feedback loop (PDA-NFL) circuit [46][47][48][49][50][51], or any other effects [4,6,23,26,37]. An additional advantage of temperature sensor creating as a separate chip is no effect of residual mechanical stresses from applying pressure to pressure sensor membrane.…”

Section: Introductionmentioning

confidence: 99%

Schottky diode temperature sensor for pressure sensor

Basov

2021

Preprint

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The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm-3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT <0.4% for temperature range of -65 to +85 ⁰C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

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Investigation of High-Sensitivity Piezoresistive Pressure Sensors at Ultra-Low Differential Pressures

Cited by 46 publications

References 40 publications

Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa

Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for Pressures Ranging From −1 to 1 kPa

High sensitive, linear and thermostable pressure sensor utilizing bipolar junction transistor for 5 kPa

Schottky diode temperature sensor for pressure sensor

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