2014
DOI: 10.1016/j.spmi.2014.10.026
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Investigation of hole-injection in α-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies

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Cited by 11 publications
(4 citation statements)
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“…F 4 TCNQ (2,3,5,6‐Tetrafluoro‐7,7,8,8‐tetracyano quinodimethane) was chosen as hole injection layer (HIL) as it efficiently injects holes from the ITO anode to hole‐transport layer (HTL). An optimized thickness of F 4 TCNQ was used for better hole injection as reported earlier α‐NPD (4,4’‐bis[N‐(1‐naphthyl)‐N‐phenyl‐l‐amino]‐biphenyl) was chosen as the (HTL) because of its high HOMO energy, in addition, considering the energy levels of materials used in the OLEDs, α‐NPD with a higher LUMO level also plays a role of an effective electron‐blocking material (EBL). By using BCP (bathocuproine) as hole‐blocking material (HBL), the reductant holes are confined in the emitting layer which didn't recombine with the electrons in the emitting zone .…”
Section: Resultsmentioning
confidence: 99%
“…F 4 TCNQ (2,3,5,6‐Tetrafluoro‐7,7,8,8‐tetracyano quinodimethane) was chosen as hole injection layer (HIL) as it efficiently injects holes from the ITO anode to hole‐transport layer (HTL). An optimized thickness of F 4 TCNQ was used for better hole injection as reported earlier α‐NPD (4,4’‐bis[N‐(1‐naphthyl)‐N‐phenyl‐l‐amino]‐biphenyl) was chosen as the (HTL) because of its high HOMO energy, in addition, considering the energy levels of materials used in the OLEDs, α‐NPD with a higher LUMO level also plays a role of an effective electron‐blocking material (EBL). By using BCP (bathocuproine) as hole‐blocking material (HBL), the reductant holes are confined in the emitting layer which didn't recombine with the electrons in the emitting zone .…”
Section: Resultsmentioning
confidence: 99%
“…Here, F 4 TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) acts as a hole-injecting layer (HIL). An optimized thickness of F 4 TCNQ was used for better hole injection as reported previously . The device performance data are presented in Table .…”
Section: Resultsmentioning
confidence: 99%
“…With the inclusion of 4 nm of F 4 TCNQ layer (device III) there is an increase of efficiencies: 13.56 cd A –1 (η c ), 9.56 lm W –1 (η p ), and 5.34% (η ext ). This can be ascribed to the efficient injection of holes from the ITO anode to the hole transport layer α-NPD. Furthermore, in device IV, with the use of BCP as a HBL, there is a further increase in the efficiencies. This increase in efficiencies may be due to the confining of redundant holes in the emitting layer which did not recombine with the electrons in the emitting zone .…”
Section: Resultsmentioning
confidence: 99%
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