Investigation of Hydridosilsesquioxane-Based Silicon Oxide Deposition on Si(111)-7 × 7

Abstract

X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), reflection-absorption infrared spectroscopy (RAIRS), and scanning tunneling microscopy (STM) have been used to characterize the discontinuous oxide films formed following exposure of gaseous H8Si8O12 hydridosilsesquioxane clusters to Si(111)-7 × 7. Collectively, the four surface characterization techniques support a reaction involving cluster decomposition on the Si(111)-7 × 7 surface. The decomposition of H8Si8O12 upon reaction with Si(111)-7 × 7 is in stark contrast with that of the reaction of H8Si8O12 with Si(100)-2 × 1 in which the cluster cage remains intact.

Addition of POSS−T8to the Si(100) Surface

“…On the other hand, preliminary DFT calculations carried out by Raghavachari and Eng suggest a reaction in which the POSS cage opens by breaking an Si−O bond, forming Si−Si and Si−O bonds with the surface (the cracked model). 24(c) Interestingly, Banaszak-Holl et al have found that in contrast, the latter mechanism occurs when the POSS−T 8 interacts with the Si(111) surface rather than with the Si(100) surface 1 Molecular structure of the octahedral POSS−T 8 , (HSiO 3/2 ) 8 .…”