Investigation of hydrogen sensing properties of graphene/Al–SnO2 composite nanotubes derived from electrospinning

Reddy, Seshendra; Zhang, Liwen; Qiu, Yejun; Chen, Yanan; Reddy, A. Sivasankar; Reddy, P. Sreedhara; Dugasani, Sreekantha Reddy

doi:10.1016/j.jiec.2018.03.001

Cited by 15 publications

(1 citation statement)

References 51 publications

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“…In general most of the metal oxide semiconductors (MOS) such as RuO 2 [9,10], NiO [11], SnO 2 [12], MnO 2 [13,14], Fe 3 O 4 [15], CuO [16], ZnO [17], and CoO [18] are having a significant contribution for the SC applications [19]. Tin oxide (SnO 2 ) is well-known among MOS due to its vast applications such as in gas sensors [20,21], biosensors [22,23], solar cells [24,25], Li-ion battery materials [26,27], photocatalytic applications [28],…”

Section: Introductionmentioning

confidence: 99%

Tin Oxide/Nitrogen‐Doped Graphene Quantum Dots Composite Nanotubes: An Efficient Electrode for Supercapacitors

Reddy

Bulakhe

Modigunta

et al. 2022

Journal of Nanomaterials

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Tin oxide (SnO2) and nitrogen-doped graphene quantum dots (N-GQDs) composite nanotubes (SnO2/N-GQD NTs) were fabricated by the electrospinning technique and followed by the thermal annealing method for the application in supercapacitor as an electrode. SnO2/N-GQD NTs with different ratio of N-GQDs were prepared by adding different ratios of N-GQDs along with tin chloride during the electrospinning process. The prepared composite's structure and morphological properties were characterized by using different techniques like XRD, FE-SEM, TEM, and XPS. The supercapacitor performance of the SnO2/N-GQD NTs composite was analyzed by the electrochemical studies such as cyclic voltammetry and galvanostatic charge-discharge (GCD) measurement in 2 M KOH solution as electrolyte. The electrochemical analyses of SnO2/N-GQD NTs was tested at different scan rates and current densities. SnO2/N-GQD NTs prepared using 3 wt.% of N-GQDs showed an excellent capacity retention even after 5000 GCD cycles and exhibited a maximum specific capacitance of 420 mF g-1 at a current density of 8 mA cm-2 in comparison to pure SnO2 NTs (230 mF cm-2).

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