Investigation of IGBT-devices for pulsed power applications

Scharnholz, Sigo; Schneider, R.; Spahn, E.; Welleman, A.; Gekenidis, S.

doi:10.1109/ppc.2003.1277726

Cited by 25 publications

(9 citation statements)

References 5 publications

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“…The development of semiconductor devices with increased current and voltage capabilities offers new possibilities to develop converters with improved performances [5]- [7]. However, the semiconductor technology does not allow to obtain 0885-8993/$26.00 © 2011 IEEE with a same component the high currents (few kiloamperes), the high voltages (several kilovolts) and the high switching frequency necessary to achieve the high precision required.…”

Section: Multiple-stage Converter Topologymentioning

confidence: 99%

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Multiple-Stage Converter Topology for High-Precision High-Current Pulsed Sources

Wassinger

Maestri

Retegui

et al. 2011

IEEE Trans. Power Electron.

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Abstract-A new high-current, low-rise-time, and high-precision pulse generator is presented. The topology is based on the use of different stages, each one specific for a particular operation range in terms of power and switching frequency. This approach allows to accomplish current, voltage, and precision requirements with standard semiconductors. Moreover, the proposed topology provides an independent and flexible adjustment of the pulse parameters (rise and fall times, flat-top duration, pulse amplitude, etc.). Experimental results are provided to validate the control of the proposed topology.

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Section: Multiple-stage Converter Topologymentioning

confidence: 99%

“…The energy stored in the load and inductor L 1 returns to the capacitor bank C 1 through D 1 , D 2 , and D 4 . The current difference between i L 1 and i L when S 3 is turned OFF flows through D 5 . Table I resumes the requirements for the semiconductor devices, where f P is the pulse repetition frequency.…”

Section: Multiple-stage Converter Topologymentioning

confidence: 99%

Multiple-Stage Converter Topology for High-Precision High-Current Pulsed Sources

Wassinger

Maestri

Retegui

et al. 2011

IEEE Trans. Power Electron.

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“…In general, the actively opening semiconductor switches are metal-oxide-semiconductor field-effect transistor [18], insulated-gate bipolar transistor [19], gate turn-OFF thyristors [17], [20], [21], and integrated-gate commutated thyristor [17]. Nevertheless, the opening capacities for these devices are limited.…”

Section: Introductionmentioning

confidence: 99%

A 50 kJ Inductive–Capacitive Storage Module With Solid-State High-Power Opening Switch Based on Counter-Current Thyristor

Wang

Xie

Zhang

et al. 2015

IEEE Trans. Plasma Sci.

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This paper describes a compact high storage density inductive-capacitive storage module. The module is based on high-power opening switches using inverse current commutation with semiconductor devices commutation principle and a high storage density Brooks inductor. These opening switches, being able to switch-OFF pulse currents up to 14.5 kA by the countercurrent subcircuit, make use of the general property of a standard high-power thyristors impedance transition from closing state to blocking state. The experimental results show that with the primary capacitor and counter-current commutation subcircuit charged voltage 3 and 2.5 kV, respectively, the charged current of the Brooks-type inductor is about 14.5 kA, with a charged time of about 4.5 ms. The output peak current of the inductive storage module is about 21 kA. The total stored energy is about 54.9 kJ while the energy density of the inductor is approximately 6.69 MJ/m 3 , which is not including the primary storage and commutation unit.Index Terms-Brooks inductor, inductive storage system, opening switch, solid state.

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“…Power IGBT modules are today capable of switching up to a dozen of kiloamperes in microseconds with kilovolts hold-off [4]. To reach the dozens to hundreds of kiloamperes needed to EMF applications one would need to stack in parallel many of these switches, with Manuscript complex auxiliary current sharing techniques.…”

Section: Introductionmentioning

confidence: 99%

Modular High-Current Generator for Electromagnetic Forming With Energy Recovery

Redondo

Jorge

Pereira³

2014

IEEE Trans. Plasma Sci.

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A 10 kJ electromagnetic forming (EMF) modulator with energy recovery based on two resonant power modules, each containing a 4.5 kV/30-kA silicon controlled rectifier, a 1.11-mF capacitor bank and an energy recovery circuit, working in parallel to allow a maximum actuator discharge current amplitude and rate of 50 kA and 2 kA/µs was successfully developed and tested. It can be plugged in standard single phase 230 V/16 A mains socket and the circuit is able to recover up to 32% of its initial energy, reducing the charging time of conventional EMF systems by up to 68%.

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Investigation of IGBT-devices for pulsed power applications

Cited by 25 publications

References 5 publications

Multiple-Stage Converter Topology for High-Precision High-Current Pulsed Sources

Multiple-Stage Converter Topology for High-Precision High-Current Pulsed Sources

A 50 kJ Inductive–Capacitive Storage Module With Solid-State High-Power Opening Switch Based on Counter-Current Thyristor

Modular High-Current Generator for Electromagnetic Forming With Energy Recovery

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