Investigation of impact ionization in thin GaAs diodes

Plimmer, S.A.; David, J.P.R.; Herbert, D C; Lee, T.-W.; Rees, G.J.; Houston, P.A.; Grey, R.; Robson, P.N.; Higgs, A.W.; Wight, D.R.

doi:10.1109/16.502416

Cited by 73 publications

(45 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have previously reported the measured photomultiplication characteristics in a range of GaAs p -i-n and n -i-p diodes with as thin as 0.025 m in [14]. In that work, increasingly significant tunnelling currents were observed when was reduced m which restricted the maximum multiplication values which could be measured in the 0.05 m and 0.025 m p -i-n to .…”

Section: Comparison Between Measured Multiplication and Predictiomentioning

confidence: 99%

The merits and limitations of local impact ionization theory [APDs]

Plimmer

David

Ong

2000

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Comparison Between Measured Multiplication and Predictiomentioning

confidence: 99%

The merits and limitations of local impact ionization theory [APDs]

Plimmer

David

Ong

2000

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

show abstract

“…For carrier generation within the high field region the gain and excess noise curves would lie between those of and , and between those of and , respectively. In thin GaAs structures, [9] and the slight discrepancies in the p -i-n and n -i-multiplication characteristics in Fig. 2 are the result of the slight difference between the avalanche widths.…”

Section: Modelingmentioning

confidence: 99%

Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs]

Li¹,

Ong

David

et al. 2000

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. Abstract-It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than predicted by the local noise model. In this paper, it is shown that the noise from multiplication initiated by carriers generated throughout a 0.1 m avalanche region is also lower than predicted by the local model but higher than that obtained with pure injection of either carrier type. This behavior is due to the effects of nonlocal ionization brought about by the dead space; the minimum distance a carrier has to travel in the electric field to initiate an ionization event.

show abstract

“…If the primary photocarrier is a hole then k = α/β and if it is an electron then k = β/α. However, recent experimental measurements on GaAs APD's [3,4,5,6] have shown a significant reduction in excess noise factor as iregion thickness decreases below one micron. A carrier starting with near zero energy, relative to the band edge, will have an almost zero chance of having an ionizing collision until it has gained sufficient energy from the electric field to attain the necessary energy to permit impact ionization [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…The values of the i-region thickness, w, the cladding doping, p + and n + , and the unintentional p-type doping in the i-region, p − were extracted from [6].…”

Section: The Monte Carlo Model (Mc)mentioning

confidence: 99%

Design and Distributed Computer Simulation of Thin p + –i–n + Avalanche Photodiodes Using Monte Carlo Model

Yakutovich

2004

Computational Science - ICCS 2004

View full text Add to dashboard Cite

Abstract. The output current of an avalanche photodiodes (APD's) fluctuates in the absence of light as well as in its presence. The noise in APD's current arises from three sources: randomness in the number and in the positions at which dark carrier pairs are generated, randomness in the photon arrival number, and randomness in the carrier multiplication process. A Monte Carlo model has been used to estimate the excess noise factor in thin p + -i-n + GaAs avalanche photodiodes. As this approach is computation intensive, simple parallel algorithm considering heterogeneous cluster based on MPICH was designed and implemented. Very good performance gain was achieved. It was found that APD model provides very good fits to the measured gain and noise and as such provides an accurate picture of the device operation. In this way, various device structures can be analyzed prior to their experimental realization. Through "computer experiments" like this outlined here, the effect of various geometries and material compositions on device performance can be assessed and optimal designs achieved.

show abstract

Investigation of impact ionization in thin GaAs diodes

Cited by 73 publications

References 12 publications

The merits and limitations of local impact ionization theory [APDs]

The merits and limitations of local impact ionization theory [APDs]

Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs]

Design and Distributed Computer Simulation of Thin p + –i–n + Avalanche Photodiodes Using Monte Carlo Model

Contact Info

Product

Resources

About